TLP590B
TOSHIBA Photocoupler
GaAℓAs Ired & Photo−Diode Array
TLP590B
Telecommunications
Programmable Controllers
MOS Gate Drivers
MOSFET Gate Drivers
The TOSHIBA TLP590B consists of an aluminum gallium arsenide
infrared emitting diode optically coupled to a series-connected
photo
−
diode array in a six-lead plastic DIP package.
The TLP590B is suitable for MOSFET gate drivers.
•
UL recognized: UL1577, file No. E67349
Unit: mm
Short Current
Type
Name
Short Current
Classification
(min)
C20
Standard
20
μA
12
μA
I
F
10 mA
Classification
Marking
20
20, blank
TLP590B
TOSHIBA
11−7A9
Note: When applying for a safety standard approval,
use the type name of the standard device.
TLP590B(C20): TLP590B
Weight: 0.39 g (typ.)
Pin Configuration (Top View)
1
2
3
6
4
1: Anode(LED)
2: Cathode(LED)
3: NC
4: Cathode
6: Anode
Start of commercial production
1989/02
1
2014-09-01
TLP590B
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Forward current
Forward current derating
(Ta
≥
25°C)
LED
Pulse forward current
(100
μs
pulse, 100 pps)
Reverse voltage
Junction temperature
Detector
Forward current
Reverse voltage
Junction temperature
Symbol
I
F
∆I
F
/ °C
I
FP
V
R
T
j
I
FD
V
RD
T
j
T
stg
T
opr
T
sol
(Note 1)
BV
S
Rating
50
−0.5
1
3
125
50
10
125
−55
to 125
−40
to 85
260
2500
Unit
mA
mA / °C
A
V
°C
μA
V
°C
°C
°C
°C
Vrms
Storage temperature range
Operating temperature range
Lead soldering temperature
(10 second)
Isolation voltage
(AC, 1 minute, R.H.
≤
60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1): Device considered a two terminal device: Pins 1, 2 and 3 shorted together, and pins 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Forward current
Operating temperature
Symbol
I
F
T
opr
Min
―
−25
Typ.
20
―
Max
25
85
Unit
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device.
Additionally, each item is an independent guideline respectively. In developing designs using this product, please
confirm specified characteristics shown in this document.
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Detector
Forward voltage
Reverse current
Symbol
V
F
I
R
C
T
V
FD
I
RD
Test Condition
I
F
= 10 mA
V
R
= 3 V
V = 0V, f = 1 MHz
I
FD
= 10
μA
V
RD
= 10 V
Min
1.2
—
—
—
—
Typ.
1.4
—
30
7
1
Max
1.7
10
60
—
—
Unit
V
μA
pF
V
nA
2
2014-09-01
TLP590B
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Open voltage
Short current
Symbol
V
OC
I
SC
Test Condition
I
F
= 10 mA
I
F
= 10 mA
Min
7.0
12
Typ.
8.0
20
Max
—
—
Unit
V
μA
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0V, f = 1 MHz
V
S
= 500 V, R.H.
≤
60%
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second in oil
DC, 1 minute in oil
Min
—
5×10
10
Typ.
0.8
10
14
Max
—
—
—
—
—
Unit
pF
Ω
Vrms
Vdc
2500
—
—
—
5000
5000
Switching Characteristics
(Ta = 25°C)
Characteristic
Turn−on time
Turn−off time
Symbol
t
ON
t
OFF
Test Condition
I
F
= 20 mA, R
SH
= 510 kΩ
C
L
=1000 pF
(Note 2)
Min
—
—
Typ.
0.2
1
Max
—
—
Unit
ms
ms
Note 2: Switching time test circuit
I
F
R
SH
C
L
V
OUT
I
F
V
OUT
5V
1V
t
OFF
0V
R
SH
: External shunt resistance
t
ON
3
2014-09-01
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