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TRS12E65C

Description
SiC Schottky Barrier Diode
File Size153KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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TRS12E65C Overview

SiC Schottky Barrier Diode

TRS12E65C
SiC Schottky Barrier Diode
TRS12E65C
1. Applications
Power Factor Correction
Solar Inverters
Uninterruptible Power Supplies
DC-DC Converters
2. Features
(1)
(2)
Forward DC current: I
F(DC)
= 12 A
Repetitive peak reverse voltage: V
RRM
= 650 V
3. Packaging and Internal Circuit
1: Cathode
2: Anode
TO-220-2L
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
Repetitive peak reverse voltage
Forward DC current
Forward pulse current
I
2
t limit value
Junction temperature
Storage temperature
Mounting torque
Symbol
V
RRM
I
F(DC)
I
FP
I
2
t
T
j
T
stg
TOR
(Note 1)
(Note 2)
Note
Rating
650
12
110
18.0
175
-55 to 175
0.6
Nm
A
2
s
Unit
V
A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: t = 100
µs
Note 2: f = 50 Hz
Note:
Start of commercial production
1
2013-03
2014-03-17
Rev.5.0

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