BULK128D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
s
s
s
SGS-THOMSON PREFERRED SALESTYPE
ORDERING CODES : BULK128D-A AND
BULK128D-B
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
1
2
3
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
SOT-82
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
t ot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25 C
St orage Temperature
Max. Operating Junction Temperature
o
Value
700
400
9
4
8
2
4
55
-65 to 150
150
Uni t
V
V
V
A
A
A
A
W
o
o
C
C
December 1997
1/7
BULK128D
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
2.27
80
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CES
I
CEO
Parameter
Collector Cut-off
Current (V
BE
= -1.5 V)
Collector-Emitter
Leakage Current
(I
B
= 0)
Emitter-Base Voltage
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current G ain
Forward Voltage Drop
RESISTIVE LO AD
Storage Time
BULK128D-A
BULK128D-B
Fall T ime
INDUCTIVE LOAD
Storage Time
F all Time
Test Cond ition s
V
CE
= 700 V
V
CE
= 700 V
V
CE
= 400 V
T
j
= 125 C
o
Min.
Typ .
Max.
100
500
250
Un it
µA
µA
µA
V
EBO
V
CEO(sus)
V
CE(sat )
∗
I
E
= 10 mA
I
C
= 100 mA
I
C
= 0.5 A
I
C
= 1 A
I
C
= 2.5 A
I
C
= 0.5 A
I
C
= 1 A
I
C
= 2.5 A
I
C
= 10 mA
I
C
= 2 A
I
f
= 2 A
V
CC
= 250 V
I
B1
= 0.4 A
T
p
= 30
µs
(see fig. 2)
V
Cl
= 200 V
I
B1
= 0.4 A
R
BB
= 0
Ω
(see fig. 1)
I
C
= 2 A
I
B2
= -0.4 A
L = 25 mH
I
B
= 0.1 A
I
B
= 0.2 A
I
B
= 0.5 A
I
B
= 0.1 A
I
B
= 0.2 A
I
B
= 0.5 A
V
CE
= 5 V
V
CE
= 5 V
9
400
0.7
1.0
1.5
1.1
1.2
1.3
10
8
2.5
V
V
V
V
V
V
V
V
V
BE(s at)
∗
h
FE
∗
V
f
t
s
V
1.7
2.0
0.2
I
C
= 2 A
V
BE(off )
= -5 V
L = 200
µH
0.6
0.1
2.5
2.9
t
f
t
s
t
f
µs
µs
µs
µs
µs
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
Note: Ordering codes:
- BULK128D-A
- BULK128D-B.
Please contact your nearest ST Microelectronics sales office for delivery details.
2/7
BULK128D
Figure 1:
Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2:
Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
5/7
Microcontroller MCU
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