
Trans Voltage Suppressor Diode,
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Objectid | 8327619073 |
| package instruction | SOD-123F, 2 PIN |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Date Of Intro | 2018-06-04 |
| Other features | EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN |
| Maximum breakdown voltage | 18.5 V |
| Minimum breakdown voltage | 16.7 V |
| Breakdown voltage nominal value | 17.6 V |
| Maximum clamping voltage | 24.4 V |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 code | R-PDSO-F2 |
| JESD-609 code | e3 |
| Maximum non-repetitive peak reverse power dissipation | 200 W |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -65 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| polarity | UNIDIRECTIONAL |
| Maximum power dissipation | 1 W |
| Maximum repetitive peak reverse voltage | 15 V |
| Maximum reverse current | 5 µA |
| Reverse test voltage | 15 V |
| surface mount | YES |
| technology | AVALANCHE |
| Terminal surface | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
