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HRLF120N10H

Description
Enhanced Avalanche Ruggedness
File Size484KB,7 Pages
ManufacturerSEMIHOW
Websitehttp://www.semihow.com/
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HRLF120N10H Overview

Enhanced Avalanche Ruggedness

HRLF120N10H
Jan 2016
HRLF120N10H
100V N-Channel Trench MOSFET
Features
High Speed Power Switching, Logic Level
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
Lead free, Halogen Free
Key Parameters
Parameter
BV
DSS
I
D
R
DS(on), typ @10V
R
DS(on), typ @4.5V
Value
100
60
9.5
11.5
Unit
V
A
Application
Synchronous Rectification in SMPS
Hard Switching and High Speed Circuit
DC/DC in Telecoms and Inductrial
Package & Internal Circuit
8DFN 5x6
D
D
D
D
S
S
S
G
Absolute Maximum Ratings
Symbol
V
DSS
V
GS
I
D
I
DM
E
AS
P
D
T
J
, T
STG
T
J
=25℃ unless otherwise specified
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25℃
Drain Current
T
C
= 100℃
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
T
A
= 25℃
Operating and Storage Temperature Range
L=0.1mH
T
C
= 25℃
Value
100
±20
60
38
160
22
83
2.0
-55 to +150
Units
V
V
A
A
A
mJ
W
W
Thermal Resistance Characteristics
Symbol
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (steady state)
Parameter
Typ.
--
--
Max.
1.5
62
Units
℃/W
℃/W
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