General Purpose Transistor
BCX51-16-G
BCX52-16-G
BCX53-16-G
RoHS Device
SOT-89-3L
1 : Base
2 : Collector
3 : Emitter
0.181(4.60)
0.173(4.40)
0.061(1.55)
REF.
Features
- Transistor PNP.
- Low voltage.
- High current.
0.102(2.60)
0.091(2.30)
1
2
3
0.023(0.58)
0.016(0.40)
0.167(4.25)
0.155(3.94)
0.020(0.52)
0.013(0.32)
Circuit Diagram
2
C
1
0.060(1.50)
TYP.
0.118(3.00)
TYP.
0.063(1.60)
0.055(1.40)
B
E
3
0.047(1.20)
0.035(0.90)
0.017(0.44)
0.014(0.35)
Dimensions in inches and (millimeter)
Maximum Ratings
(at T =25°C unless otherwise noted)
A
Parameter
BCX51
Collector-Base voltage
BCX52
BCX53
BCX51
Collector-Emitter voltage
BCX52
BCX53
Emitter-Base voltage
Continuous current
Collector power dissipation
Thermal resistance from junction to ambient
Junction temperature range
Storage temperature range
Symbol
Value
-45
Unit
V
CBO
-60
-100
-45
V
V
CEO
-60
-80
V
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
-5
-1
500
250
-40~+150
-55~+150
V
A
mW
°C/W
°C
°C
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Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR49
Comchip Technology CO., LTD.
General Purpose Transistor
Electrical Characteristics
(at T =25°C unless otherwise noted)
A
Parameter
Symbol
Conditions
BCX51
Min
-45
-60
-100
-45
-60
-80
-5
Typ
Max
Unit
Collector-base breakdown voltage
V
(BR)CBO
I
C
= -100µA , I
E
= 0
BCX52
BCX53
BCX51
V
Collector-emitter breakdown voltage
V
(BR)CEO*
I
C
= -10mA, I
B
= 0
BCX52
BCX53
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)*
I
E
= -100µA , I
C
= 0
V
CB
= -30V , I
E
= 0
V
EB
= -5V , I
C
= 0
V
CE
= -2V , I
C
= -5mA
V
CE
= -2V , I
C
= -150mA
V
CE
= -2V , I
C
= -0.5A
I
C
= -0.5A , I
B
= -50mA
V
CE
= -2V , I
C
= -0.5A
V
CE
= -5V , I
C
= -10mA
f = 100MH
Z
V
-0.1
-0.1
µA
µA
63
63
40
-0.5
-1
50
V
V
MHz
250
DC current gain
h
FE(2)*
h
FE(3)*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
* Pulse test
V
CE
(sat)*
V
BE*
f
T
Classification Of h
FE(2)
Part No.
Range
BCX51-16-G
100-250
BCX52-16-G
100-250
BCX53-16-G
100-250
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR49
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Comchip Technology CO., LTD.
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (BCX51-16-G, BCX52-16-G, BCX53-16-G )
Fig.1 -
Static Characteristic
-400
COMMON EMITTER
TA = 25°C
Fig.2 - h
FE—
I
C
1000
COMMON EMITTER
V
CE
=-2V
-350
Collector Current, I
C
(mA)
-300
-250
-200
-150
-100
-50
-2.0mA
-1.8mA
-1.6mA
-1.4mA
-1.2mA
-1.0mA
-0.8mA
-0.6mA
-0.4mA
I
B
=-0.2mA
DC Current Gain, h
FE
Ta=100°C
100
Ta=25°C
-0
-0
-1
-2
-3
-4
-5
-6
10
-1
-10
-100
-1000
Collector-Emitter Voltage,
VCE
(V)
Collector Current, I
C
(mA)
Fig.3 - V
CEsat —
I
C
-1000
-400
β=10
β=10
Fig.4 - V
BEsat —
I
C
-800
Ta=25°C
Collector-Emitter Saturation Voltage
,
V
CEsat
(mV)
Base-Emitter Saturation Voltage
, V
BEsat
(mV)
-300
-600
Ta=100°C
-200
-400
-100
-200
Ta=100°C
Ta=25°C
-0
-0.1
-1
-10
-100
-1000
-0
-0.1
-1
-10
-100
-1000
Collector Current, Ic (mA)
Collector Current, Ic (mA)
Fig.5 - f
T
— I
C
150
Fig.6 - C
ob
/C
ib
— V
CB
/V
EB
1000
f=1MH
Z
I
E
=0 / I
C
=0
Ta = 25°C
Transition Frequency, f
T
( MH
Z
)
Capacitance, (pF)
V
CE
=-5V
Ta = 25°C
100
100
50
10
0
-0
-20
-40
-60
-80
-100
0
-0.1
-1
-10
-20
Collector Current, I
C
(mA)
Reverse Voltage, (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR49
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Comchip Technology CO., LTD.
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (BCX51-16G, BCX52-16-G, BCX53-16-G )
Fig.7 - I
C
— V
BE
-1000
0.75
Fig.8 - P
C
— Ta
Collector Power Dissipation, P
C
(mW)
Collector Current,
I
C
(mA)
-100
0.50
-10
Ta=100°C
Ta=25°C
0.25
-1
V
CE
=-2V
-0.1
-0
-200
-400
-600
-800
-1000
0.00
0
25
50
75
100
125
150
Base-Emitter Voltage,
V
BE
(mV)
Ambient Temperature, T
a
(°C)
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Comchip Technology CO., LTD.
General Purpose Transistor
Reel Taping Specification
12
0
o
D
2
D
1
D
W
1
SYMBOL
A
4.85
±
0.10
0.191
±
0.004
B
4.45
±
0.10
0.175± 0.004
C
1.85
±
0.10
0.073
±
0.004
d
1.50
+
0.10
0.059
+
0.004
D
180
±
2.00
7.087
±
0.079
D
1
60.00
±
1.00
2.362
±
0.039
D
2
R32.00
±
1.00
1.260
±
0.039
SOT-89-3L
(mm)
(inch)
SYMBOL
E
1.75
±
0.10
0.069
±
0.004
F
5.50
±
0.10
0.217
±
0.004
P
8.00
±
0.10
0.315
±
0.004
P
0
4.00
±
0.10
0.158
±
0.004
P
1
2.00
±
0.10
W
12.00
+
0.30 /
–0.10
W
1
16.50
±
1.00
SOT-89-3L
(mm)
(inch)
0.079
±
0.004
0.472
+
0.012 /
–0.004
0.650
±
0.039
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR49
REV:A
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Comchip Technology CO., LTD.
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