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BUP314D

Description
42 A, 1200 V, N-CHANNEL IGBT, TO-218
CategoryDiscrete semiconductor    The transistor   
File Size101KB,9 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BUP314D Overview

42 A, 1200 V, N-CHANNEL IGBT, TO-218

BUP314D Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Is SamacsysN
Other featuresHIGH SPEED
Maximum collector current (IC)42 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)60 ns
Gate emitter threshold voltage maximum6.5 V
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment300 W
Certification statusNot Qualified
Maximum rise time (tr)100 ns
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Maximum off time (toff)560 ns
Nominal off time (toff)420 ns
Maximum opening time (tons)110 ns
Nominal on time (ton)75 ns
VCEsat-Max3.2 V
Base Number Matches1
BUP 314D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Pin 1
G
Type
BUP 314D
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
Symbol
Values
1200
1200
Unit
V
Pin 2
C
Ordering Code
Q67040-A4226-A2
Pin 3
E
V
CE
I
C
Package
TO-218 AB
1200V 42A
V
CE
V
CGR
V
GE
I
C
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current, (limited by bond wire)
± 20
A
42
33
T
C
= 60 °C
T
C
= 90 °C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
84
66
T
C
= 25 °C
T
C
= 90 °C
Diode forward current
I
F
28
T
C
= 90 °C
Pulsed diode current,
t
p
= 1 ms
I
Fpuls
168
T
C
= 25 °C
Power dissipation
P
tot
300
W
-55 ... + 150
-55 ... + 150
Jul-30-1996
°C
T
C
= 25 °C
Chip or operating temperature
Storage temperature
1
T
j
T
stg
Semiconductor Group

BUP314D Related Products

BUP314D Q67040-A4226-A2
Description 42 A, 1200 V, N-CHANNEL IGBT, TO-218 42 A, 1200 V, N-CHANNEL IGBT, TO-218
Number of components 1 1
Number of terminals 3 3
Terminal form THROUGH-HOLE THROUGH-hole
Terminal location SINGLE single
transistor applications MOTOR CONTROL Motor control
Transistor component materials SILICON silicon
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