QPD0050
75 W, DC to 3.6 GHz 48V GaN RF Power Transistor
Applications
•
•
•
•
•
•
W-CDMA / LTE
Macrocell Base Station Driver
Microcell Base Station
Small Cell Final Stage
Active Antenna
General Purpose Applications
6 Pin 7.2x6.6mm DFN
Product Features
•
•
•
•
•
•
Operating Frequency Range: DC to 3.6 GHz
Operating Drain Voltage: 48 V
Maximum Output Power (P
SAT
): 82.8 W at 2.6 GHz
Maximum Drain Efficiency: 78.5% at 2.6 GHz
Efficiency-Tuned P3dB Gain: 19.4 dB at 2.6 GHz
Surface Mount Plastic Package
Functional Block Diagram
General Description
The QPD0050 is a wide band over-molded QFN discrete
power amplifier. The device is a single stage unmatched
power amplifier transistor.
The QPD0050 can be used in Doherty architecture for
the final stage of a base station power amplifier for small
cell, microcell, and active antenna systems. The
QPD0050 can also be used as a driver in a macrocell
base station power amplifier.
The wide bandwidth of the QPD0050 makes it suitable
for many different applications from DC to 3.6 GHz.
QPD0050 can deliver P
SAT
of 82 W at 48 V operation at
2.6 GHz.
Lead-free and ROHS compliant.
Pin Configuration
Pin No.
1,2,3
4,5,6
Backside Paddle
Label
RF IN, V
G
RF OUT, V
D
RF/DC Ground
Ordering Information
Part No. ECCN
QPD0050
EAR99
Description
75 W 48 V DC-3.6 GHz
GaN RF Power Transistor
Disclaimer: Subject to change without notice
Preliminary Datasheet: Rev 03-21-16
© 2016 TriQuint Semiconductor, Inc
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1 of 9
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www.triquint.com
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www.qorvo.com
QPD0050
75 W, DC to 3.6 GHz 48V GaN RF Power Transistor
Absolute Maximum Ratings
Parameter
Rating
Gate Voltage (V
G
)
−10 V
Drain Voltage (V
D
)
+55 V
Maximum RF Input Power `
35 dBm
VSWR Mismatch, P1dB Pulse (20%
10:1
duty cycle, 100 µ width), T = 25°C
Storage Temperature
−65 to +150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Recommended Operating Conditions
Parameter
Operating Temperature
Gate Voltage (V
G
)
Drain Voltage (V
D
)
Quiescent Current (I
CQ
)
T
CH
for >10
6
hours MTTF
Min
−40
Typ
−2.7
48
130
Max Units
°C
V
V
mA
°C
225
Electrical performance is measured under conditions noted in
the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
RF Characterization – Power-Tuned Load Pull Performance
Test conditions unless otherwise noted: V
D
= 48 V, I
CQ
= 130 mA, T = 25°C, Pulsed CW (10% duty cycle, 100 µs width)
Frequency
(MHz)
1800
2000
2140
2200
2500
2600
2700
3400
3500
3600
Source
Impedance
4.01 – j2.99
4.47 – j1.53
6.09 – j1.33
5.20 – j0.08
6.86 + j0.57
7.57 + j0.97
7.43 + j1.34
10.25 – j0.25
9.38 + j0.01
8.86 + j0.04
Load
Impedance
6.15 + j1.97
5.92 + j1.82
6.11 + j0.96
5.89 + j0.43
4.74 – j1.10
4.74 – j1.09
4.92 – j2.26
4.47 – j4.64
4.47 – j4.63
4.47 – j4.63
Gain @ P3dB
(dB)
21.04
20.40
19.68
19.05
17.68
17.64
16.84
15.16
15.25
15.89
P3dB
(dBm)
48.78
48.53
48.45
48.37
49.04
49.18
49.03
48.04
48.12
48.04
Drain Efficiency
(%)
63.68
63.31
61.46
58.86
62.82
67.65
61.32
56.00
59.38
57.87
RF Characterization – Efficiency-Tuned Load Pull Performance
Test conditions unless otherwise noted: V
D
= 48 V, I
CQ
= 130 mA, T = 25°C, Pulsed CW (10% duty cycle, 100 µs width)
Frequency
(MHz)
1800
2000
2140
2200
2500
2600
2700
3400
3500
3600
Source
Impedance
4.01 – j2.99
4.01 – j1.53
6.09 – j1.33
5.20 – j0.08
6.86 + j0.57
7.57 + j0.97
7.43 + j1.34
10.25 – j0.25
9.38 + j0.01
8.86 + j0.04
Load
Impedance
5.11 + j8.94
4.80 + j4.73
4.58 + j5.24
3.91 + j4.22
3.25 + j2.36
2.91 + j1.69
2.91 + j1.69
2.17 – j2.02
1.89 – j2.71
2.62 – j3.05
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Gain @ P3dB
(dB)
23.18
22.06
21.68
21.30
19.62
19.36
19.02
16.84
16.17
17.07
P3dB
(dBm)
45.85
47.49
46.77
46.91
47.24
47.27
46.87
46.16
46.11
46.98
Drain Efficiency
(%)
81.70
71.76
74.50
71.82
76.03
78.51
77.83
70.07
70.86
67.45
Preliminary Datasheet: Rev 03-21-16
© 2016 TriQuint Semiconductor, Inc
Disclaimer: Subject to change without notice
www.triquint.com
/
www.qorvo.com
QPD0050
75 W, DC to 3.6 GHz 48V GaN RF Power Transistor
Thermal Information
Parameter
Thermal Resistance at
Average Power (θ
JC
)
Conditions
T
CASE
= 105°C, T
CH
= 139.12°C
CW: P
DISS
= 13.43 W, P
OUT
= 3.55 W
Value
2.54
Units
°C/W
Notes:
1. Thermal resistance measured to package backside.
Median Lifetime
Preliminary Datasheet: Rev 03-21-16
© 2016 TriQuint Semiconductor, Inc
-
3 of 9
-
Disclaimer: Subject to change without notice
www.triquint.com
/
www.qorvo.com
QPD0050
75 W, DC to 3.6 GHz 48V GaN RF Power Transistor
Load Pull Plots
Test conditions unless otherwise noted: V
D
= 48 V, I
CQ
= 131 mA, T = 25°C, Pulsed CW (10% duty cycle, 100 µs width)
Preliminary Datasheet: Rev 03-21-16
© 2016 TriQuint Semiconductor, Inc
-
4 of 9
-
Disclaimer: Subject to change without notice
www.triquint.com
/
www.qorvo.com
QPD0050
75 W, DC to 3.6 GHz 48V GaN RF Power Transistor
Load Pull Plots
Test conditions unless otherwise noted: V
D
= 48 V, I
CQ
= 131 mA, T = 25°C, Pulsed CW (10% duty cycle, 100 µs width)
Preliminary Datasheet: Rev 03-21-16
© 2016 TriQuint Semiconductor, Inc
-
5 of 9
-
Disclaimer: Subject to change without notice
www.triquint.com
/
www.qorvo.com
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