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BUP203

Description
Insulated Gate Bipolar Transistor, 21A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size242KB,7 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BUP203 Overview

Insulated Gate Bipolar Transistor, 21A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

BUP 203
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1
G
Type
BUP 203
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
Symbol
Values
1000
1200
Unit
V
Pin 2
C
Ordering Code
Q67078-A4402-A2
Pin 3
E
V
CE
I
C
Package
TO-220 AB
1000V 23A
V
CE
V
CGR
V
GE
I
C
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
± 20
A
23
15
T
C
= 25 °C
T
C
= 90 °C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
46
30
T
C
= 25 °C
T
C
= 90 °C
Avalanche energy, single pulse
E
AS
20
mJ
I
C
= 10 A,
V
CC
= 24 V,
R
GE
= 25
L
= 3 mH,
T
j
= 25 °C
Power dissipation
P
tot
165
W
-55 ... + 150
-55 ... + 150
°C
T
C
= 25 °C
Chip or operating temperature
Storage temperature
T
j
T
stg
Semiconductor Group
1
Dec-06-1995

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BUP203 Q67078-A4402-A2
Description Insulated Gate Bipolar Transistor, 21A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
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