TQP9111
1.8 – 2.7 GHz 2 Watt Power Amplifier
Applications
Wireless Infrastructure
Repeaters, Boosters, DAS
High Power Amplifiers
Pico and Macro Base Stations
FDD or TDD
4x4 mm Leadless SMT Package
Product Features
1.8 – 2.7 GHz Frequency Range
29.8 dB Gain Typ.
+46 dBm Output IP3 at +14 dBm/tone
+32.5 dBm P1dB
Integrated interstage matching
Bias Adjustable
Internal RF overdrive protection
Internal DC overvoltage protection
Shut-down capability
Functional Block Diagram
NC
20
19
18
17
NC
Pin 1 Marking
NC
RFin
RFin
RFin
NC
1
2
3
4
5
16
15
14
13
12
11
Vbias
Vcc1
Vcc2
NC
RFout
RFout
RFout
NC
Iref1
Iref2
NC
NC
NC
10
6
7
8
9
Backside Paddle
RF/DC GND
Top View
General Description
The TQP9111 is a high efficiency two-stage driver
amplifier in a low-cost surface-mount package. The
amplifier is able to achieve high performance with +46
dBm OIP3 and +32.5 dBm P1dB. This linear amplifier
integrates two high performance amplifier stages onto a
module to allow for a compact system design. The
integrated inter-stage match minimizes performance
variation that would otherwise be attributed to external
matching component value and placement tolerances.
Both the input and output stage amplifiers are bias
adjustable allowing the amplifier’s power consumption to
be reduced for occasions when high power performance
is not required. Both stages can also be turned off when
not being used for power savings or for TDD systems. The
output match is externally tunable to allow the amplifier to
be optimized for high power or high linearity applications.
The TQP9111 is available in a RoHS-compliant 20-pin
4 x 4 mm surface mount package.
Pin Configuration
Pin No.
1, 5, 7, 9, 10, 11, 15, 17, 19
2, 3, 4
6
8
12, 13, 14
16
18
20
Backside Pad
Label
NC
RF in
I
REF1
I
REF2
RF out
V
BIAS
V
CC2
V
CC1
GND
Ordering Information
Part No.
Description
TQP9111
1.8–2.7 GHz Power Amplifier
TQP9111-PCB2140 1.8-2.2 GHz Evaluation board
TQP9111-PCB2600 2.3-2.7 GHz Evaluation board
Standard T/R size = 2500 pieces on a 13” reel
Disclaimer: Subject to change without notice
Advanced Data Sheet: Rev. E 09-17-15
© 2015 TriQuint Semiconductor, Inc
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1 of 12
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TQP9111
1.8 – 2.7 GHz 2 Watt Power Amplifier
Absolute Maximum Ratings
Parameter
Storage Temperature
Supply Voltage (V
CC
)
RF Input Power, CW, 50 Ω, T=25 °C
Recommended Operating Conditions
Parameter
Supply Voltage (V
CC
)
T
CASE
Tj for >10
6
hours MTTF
Rating
−55 to 150 °C
+6.5 V
+23 dBm
Min
−40
Typ
+5.0
Max Units
+5.25
+105
+170
V
°C
°C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted:
V
CC
= +5.0 V, I
CC
= 521 mA, I
REF1
= 4.5 mA, I
REF2
= 19.5 mA, Temp.= +25 °C, 50 Ω
system.
Parameter
Conditions
Min
Typ
Max
2700
Units
MHz
MHz
dB
dB
dB
dB
dBm
dBm
mA
mA
mA
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Noise Figure
Output P1dB
Output IP3
Current, I
CC
Current, I
REF1
Current, I
REF2
Total Current
Thermal Resistance, θ
jc
Junction to case
1800
2140
29.8
13
20
6.2
+32.5
+46
521
4.5
19.5
545
Pout
=
+11 dBm
/
tone, Δf
=
1 MHz
22.6
mA
°C/W
Advanced Data Sheet: Rev. E 09-17-15
© 2015 TriQuint Semiconductor, Inc
-
2 of 12
-
Disclaimer: Subject to change without notice
www.Qorvo.com
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TQP9111
1.8 – 2.7 GHz 2 Watt Power Amplifier
TQP9111−PCB2140 Evaluation Board (1.8 – 2.2 GHz)
J3
C7
Vcc
10 uF
R6
0
R1
0
C5
C1
0.1 uF
B1
0
0.1uF
C2
C15
R3
0
0.1uF
1000 pF
L2
100 nH
L1
15 nH
L4
220
20
19
18
17
1
C11
2
C9
0
Z3
2.4 pF
Z3C
3
RF
Input
5.6 pF
2.2
4
5
16
15
14
13
12
11
Z4
4.3 pF
Z5
1.2 nH
Z6
100 pF
C3
J1
J2
RF
Output
C7
B1
2.7 pF
R1
C15
R3
C1
R6
10
6
7
8
9
C5
C2
L1
L4
J3
L2
Z3
Z4
R5
0
0.1uF
R7
110
J4
Vpd
Z6
L5
0
L3
27 nH
C13
J1
C11
C9
Z3C
U1
Z5
C3
J2
L5
Bill of Material TQP9111-PCB2140
Ref Des
U1
C1, C5, C13, C15
C2
C3
Z4
Z3C
Z3
Z5
C7
Z6
C11
R7
L4
B1, L5, R1, R5, C9, R3, R6
L1
L2
L3
Value
0.1 uF
1000 pF
100 pF
4.3 pF
2.2 Ω
2.4 pF
1.2 nH
10 uF
2.7 pF
5.6 pF
110 Ω
220 Ω
0Ω
15 nH
100 nH
27 nH
Description
TQP9111
CAP, 0603,10%, 50V, X7R
CAP, 0603, 5%, 50V, NPO
CAP, 0603, 5%, 50V, NPO
CAP, 0402, +/-0.25PF. 50V. NPO/COG
RES, 0402, 5PCT. 1/16W. CHIP.
CAP, 0402, +/- 0.1PF. 50V. NPO
IND, 0402, chip, +/-0.3 nH
CAP, 6032, 20%, 50V, Tantalum
CAP, 0402, +/- 0.1PF. 50V. NPO/COG
CAP, 0603, +/-0.1PF. 200V. NPO/COG
RES, 0603, 1PCT., 1/10W
RES, 0603, 1PCT., 1/16W
RES, 0603, 5%, 1/16W, Chip
IND, 1008, 5%, Ceramic
IND, 0805, 5%, Ceramic
IND, 0603, 5%, Ceramic
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3 of 12
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Manuf.
TriQuint
various
various
various
various
various
various
various
R5
R7
L3
J6
J4
C13
Part Number
TQP9111
various
various
various
various
various
various
various
various
various
Disclaimer: Subject to change without notice
Advanced Data Sheet: Rev. E 09-17-15
© 2015 TriQuint Semiconductor, Inc
www.Qorvo.com
/
www.qorvo.com
TQP9111
1.8 – 2.7 GHz 2 Watt Power Amplifier
Typical Performance TQP9111−PCB2140
Test conditions unless otherwise noted:
V
CC
= +5 V, I
CQ
= 545 mA (typ.), V
PD
= +5 V, Temp. = +25 °C
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3
Noise Figure
Conditions
1800
30.4
15
9
+33.4
Pout= +14 dBm/tone, Δf=1 MHz
+46
6.0
Typical Value
1960
30.0
14
15
+32.5
+46
6.1
2140
29.8
13
20
+32.5
+46
6.2
Units
MHz
dB
dB
dB
dBm
dBm
dB
Performance Plots TQP9111-PCB2140
Test conditions unless otherwise noted:
V
CC
= +5 V, I
CQ
= 545 mA (typ.), V
PD
= +5 V, Temp. = +25 °C
32
Gain vs. Frequency
0
Input Return Loss vs. Frequency
0
-5
Output Return Loss vs. Frequency
-5
30
-10
|S11| (dB)
Gain (dB)
+105°C
|S22| (dB)
+105°C
+85°C
+25°C
−40°C
-10
+85°C
+25°C
−40°C
-15
-20
28
+105°C
+85°C
+25°C
−40°C
-15
-25
-20
1800
-30
1800
26
1800
1900
2000
2100
2200
1900
2000
2100
2200
1900
2000
2100
2200
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
36
Output P1dB vs. Frequency
+105°C
+85°C
+25°C
50
OIP3 vs. Pout
Temp.=+25°C
-30
-35
ACLR vs. Pout
Temp.=+25°C
Signal : LTE 20MHz, PAR = 9.5dB
Channel BW E-UTRA, IBW = 18.02MHz
-40
P1dB (dBm)
ACLR (dBC)
OIP3 (dBm)
34
−40°C
45
-45
-50
-55
F = 1.8 GHz
F = 1.9 GHz
F = 1.96 GHz
F = 2.0 GHz
F = 2.1 GHz
F = 2.14 GHz
F = 2.2 GHz
F = 1.8 GHz
F = 1.9 GHz
32
40
F = 2.0 GHz
F = 2.1 GHz
F = 2.2 GHz
-60
-65
30
1800
35
-70
1900
2000
2100
2200
8
9
10
11
12
13
14
15
14
15
16
17
18
19
20
21
22
23
24
25
26
27
Frequency (MHz)
8
7
Pout (dBm/tone)
Pout (dBm)
Noise figure vs. Frequency
Noise Figure (dB)
6
5
+105°C
+85°C
+25°C
−40°C
4
3
2
1
0
1800
1900
2000
2100
2200
Frequency (MHz)
Advanced Data Sheet: Rev. E 09-17-15
© 2015 TriQuint Semiconductor, Inc
-
4 of 12
-
Disclaimer: Subject to change without notice
www.Qorvo.com
/
www.qorvo.com
TQP9111
1.8 – 2.7 GHz 2 Watt Power Amplifier
TQP9111−PCB2600 Evaluation Board (2.3 – 2.7 GHz)
J3
C7
Vcc
10 uF
R6
0
R1
0
C5
C1
0.1 uF
B1
0
0.1uF
C2
C15
R3
220
0.1uF
1000 pF
L2
6.8 nH
20
19
18
17
16
L1
10 nH
L4
0
1
C11
2
C9
0
Z3
2.2 pF
Z3C
3
RF
Input
4.7 pF
1.2
4
5
10
15
14
13
12
11
Z4
3.0 pF
Z5
1.2 nH
Z6
100 pF
C3
J1
J2
RF
Output
1.6 pF
6
7
8
L5
0
L3
0
C13
R5
0
0.1uF
R7
110
J4
Vpd
9
B1
R1
C15
C1
C7
C5
C2
L1
J3
L2
Z1
Z2
Bill of Material TQP9111-PCB2600
Ref Des
U1
C1, C5, C13, C15
C2
C3
Z4
Z3C
Z3
Z5
C7
Z6
C11
R7
R3
B1, L3, L4, L5, R1, R5, C9, R6
L1
L2
Advanced Data Sheet: Rev. E 09-17-15
© 2015 TriQuint Semiconductor, Inc
Value
0.1 uF
1000 pF
100 pF
3.0 pF
1.2 Ω
2.2 pF
1.2 nH
10 uF
1.6 pF
4.7 pF
110 Ω
220 Ω
0Ω
10 nH
6.8 nH
Description
TQP9111
CAP, 0603,10%, 50V, X7R
CAP, 0603, 5%, 50V, NPO
CAP, 0603, 5%, 50V, NPO
CAP, 0402, +/-0.25PF. 50V. NPO/COG
RES, 0402, 5PCT. 1/16W. CHIP.
CAP, 0402, +/- 0.1PF. 50V. NPO
IND, 0402, chip, +/-0.3 nH
CAP, 6032, 20%, 50V, Tantalum
CAP, 0402, +/- 0.1PF. 50V. NPO/COG
CAP, 0603, +/-0.1PF. 200V. NPO/COG
RES, 0603, 1PCT., 1/10W
RES, 0603, 1PCT., 1/16W
RES, 0603, 5%, 1/16W, Chip
IND, 1008, 5%, Ceramic
IND, 0805, 5%, Ceramic
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R7
L3
J6
C13
Z4
J1
C11
C9
Z5
U1
Z3
C3
J2
J4
Manuf. Part Number
TriQuint
various
various
various
various
various
various
various
TQP9111
various
various
various
various
various
various
various
various
Disclaimer: Subject to change without notice
www.Qorvo.com
/
www.qorvo.com
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