MOSFET
2N7002K-HF
N-Channel
RoHS Device
Halogen Free
Features
-Small Signal MOSFET.
-ESD protected: 1000V.
0.055 (1.40)
0.047 (1.20)
SOT-23
0.120 (3.04)
0.110 (2.80)
3
1
2
0.080 (2.04)
0.070 (1.78)
0.007 (0.18)
0.003 (0.08)
0.104 (2.64)
0.083 (2.10)
Marking: 702
Equivalent Circuit
D
G
S
G : Gate
S : Source
D : Drain
0.020 (0.50)
0.015 (0.37)
0.044 (1.11)
0.035 (0.89)
0.004 (0.100)
0.001 (0.013)
0.027 (0.69)
0.014 (0.35)
Dimensions in inches and (millimeter)
Maximum Ratings
(at T =25°C unless otherwise noted)
A
Rating
Drain-Source voltage
Drain-Gate Voltage
(R
GS
=1.0 MΩ)
@Continuous T
C
=25°C(Note 1)
Drain current
@Continuous T
C
=100°C(Note 1)
@Pulsed (Note 2)
@Continuous
Gate-Source voltage
@Non-repetitive (tp
≤
50μs)
Symbol
V
DSS
V
DGR
I
D
I
D
I
DM
V
GS
V
GSM
Value
60
60
±115
±75
±800
±20
±40
Unit
Vdc
Vdc
mAdc
Vdc
Vpk
Thermal Characteristics
Characteristics
Total Device Dissipation FR–5 Board (Note 3)
@T
A
= 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate (Note 4)
@T
A
= 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
ΘJA
T
J
, T
STG
R
ΘJA
P
D
Symbol
P
D
Max. Value
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Note:
1.
The Power Dissipation of the package may result in a lower continuous drain current.
2.
Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2.0%.
3.
FR-5 = 1.0 x 0.75 x 0.062 in.
4.
Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR09
REV: A
Page 1
MOSFET
Electrical Characteristics
(at T =25°C unless otherwise noted)
A
Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
=0V, V
DS
=60V)
Gate–Body Leakage Current, Forward
Gate–Body Leakage Current, Reverse
Conditions
V
GS
=0V, I
D
=10μA
T
J
=25°C
Symbol
V
(BR)DSS
Min.
60
Typ.
Max.
Unit
V
1.0
I
DSS
μ
A
T
J
=125°C
V
GS
=20V
V
GS
=-20V
I
GSSF
I
GSSR
500
1
-1
μ
A
μ
A
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
On-State Drain Current
V
DS
=V
GS
, I
D
=250
μ
A
V
DS
≥2.0
V
DS(ON)
, V
GS
=10V
V
GS
=10V, I
D
=500mA
Static Drain-Source On-State Voltage
V
GS
=5V, I
D
=50mA
V
GS
=10V, I
D
=500mA @T
C
=25°C
Static Drain-Source
On-State Resistance
V
GS
=10V, I
D
=500mA @T
C
=125°C
R
DS(ON)
V
GS
=5V, I
D
=50mA @T
C
=25°C
V
GS
=5V, I
D
=50mA @T
C
=125°C
Forward Transconductance
V
DS
≥2.0V
DS(ON)
,
I
D
=200mA
g
fs
80
1.8
7.5
13.5
mS
1.4
V
DS(ON)
0.375
7.5
13.5
Ω
V
GS(th)
I
D(ON)
1
500
3.75
V
1.5
2.5
V
mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, V
GS
=0V, f=1.0MHz
C
iss
C
oss
C
rss
17
10
2.5
50
25
5.0
pF
SWITCHING CHARACTERISTICS (Note 1)
Turn-On Delay Time
Turn-Off Delay Time
V
DD
=25V, I
D
=500mA,
R
G
=25Ω, R
L
=50Ω, V
GΕΝ
=10
V
t
d(on)
t
d(off)
7
11
20
nS
40
BODY–DRAIN DIODE RATINGS
Diode Forward On-Voltage
Source Current Continuous
Source Current Pulsed
Note: 1. Pulse Test: Pulse Width
≦300μs
, Duty
C
ycle
≦2.0%.
I
S
=115mA, V
GS
=0V
Body Diode
V
SD
I
S
I
SM
-1.5
-115
-800
V
mA
mA
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR09
REV: A
Page 2
MOSFET
RATING AND CHARACTERISTIC CURVES (2N7002K-HF)
Fig.1 Ohmic Region
2.0
1.8
1.0
Fig.2 Transfer Characteristics
V
DS
= 10V
-55°C
25°C
I
D
, Drain-Source Current (A)
1.6
1.4
1.2
1.0
I
D
, Drain-Source Current (A)
V
GS
=10V
9V
0.8
125°C
8V
0.6
7V
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
8
6V
5V
4V
3V
0.4
0.2
0
10
0
1
2
3
4
5
6
7
8
9
10
9
V
DS
, Drain-Source Voltage (V)
V
GS
, Gate-Source Voltage (V)
Fig.3 Temperature Versus Static
Drain-Source On-Resistance
2.4
2.2
V
GS
=10V, I
D
=200mA
Fig.4 Temperature Versus Gate
Threshold Voltage
1.2
1.15
V
DS
=V
GS
, I
D
=1.0mA
R
DS(ON)
, Static Drain-Source
On-Resistance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-60
-20
+20
+60
+100
+140
V
GS(th)
, Threshold Voltage
2.0
1.1
1.0
0.9
0.8
0.7
-60
-20
+20
+60
+100
+140
T, Temperature (°C)
T, Temperature (°C)
V
GS
=5V, I
D
=0.05A
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR09
REV: A
Page 3
MOSFET
Reel Taping Specification
P
0
P
1
d
Index hole
E
T
F
B
P
A
W
C
12
0
o
D
2
D
1
D
W
1
Trailer
.......
.......
10 pitches (min)
Device
.......
.......
.......
.......
Leader
.......
.......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
3.10 ± 0.10
0.122
±
0.004
B
2.85 ± 0.10
0.112
±
0.004
C
1.40 ± 0.10
0.055
±
0.004
d
1.55 ± 0.10
0.061
±
0.004
D
178 ± 1
7.008
±
0.04
D
1
50.0 MIN.
1.969 MIN.
D
2
13.0 ± 0.20
0.512
±
0.008
SOT-23
(mm)
(inch)
SYMBOL
E
1.75 ± 0.10
0.069
±
0.004
F
3.50 ± 0.05
0.138
±
0.002
P
4.00 ± 0.10
0.157
±
0.004
P
0
4.00 ± 0.10
0.157
±
0.004
P
1
2.00 ± 0.05
0.079
±
0.004
W
8.00 ± 0.30
0.315
±
0.008
W
1
14.4 MAX.
0.567 MAX.
SOT-23
(mm)
(inch)
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR09
REV: A
Page 4
MOSFET
Marking Code
Part Number
2N7002K-HF
Marking Code
702
∑
X
Product marking code
∑
: Month Code
3
702
∑
XX
1
2
Month Code:
Month
Jan
Feb
Wer
Apr
May
Jun
Odd Year
(per A.D.)
1
2
3
4
5
6
Even Year
(per A.D.)
E
F
H
J
K
L
Month
Jul
Aug
Sep
Oct
Nov
Dec
“ • ” or “••” or “–” :Traceablity code
Odd Year
(per A.D.)
7
8
9
T
V
C
Even Year
(per A.D.)
N
P
U
X
Y
Z
Suggested PAD Layout
SOT-23
SIZE
(mm)
A
B
C
D
E
0.80
0.90
0.95
2.00
2.90
(inch)
0.031
B
D
E
0.035
0.037
0.079
A
0.114
C
Standard Packaging
REEL PACK
Case Type
REEL
( pcs )
Reel Size
(inch)
SOT-23
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTR09
REV: A
Page 5
京公网安备 11010802033920号
EEWORLD
