MOSFET
2N7002KDW-G
N-Channel
RoHS Device
V
(BR)DSS
60V
R
DS(on)
MAX
5Ω@10V
5.3Ω@4.5V
340mA
I
D
Features
- High density cell design for low R
DS(ON)
.
- Voltage control small signal switch.
- Rugged and reliable.
SOT-363
0.087(2.20)
0.079(2.00)
6
5
4
- High saturation current capability.
- ESD protected up to 2KV
0.053(1.35)
0.045(1.15)
1
2
0.055(1.40)
0.047(1.20)
3
Equivalent Circuit
6
D
2
5
G
1
4
S
1
0.014(0.35)
0.006(0.15)
0.039(1.00)
0.035(0.90)
0.006(0.15)
0.003(0.08)
0.096(2.45)
0.085(2.15)
0.004(0.10)
0.000(0.00)
0.018(0.46)
0.010(0.26)
Dimensions in inches and (millimeter)
S
2
1
G
2
2
D
1
3
Maximum Ratings
(at T =25°C unless otherwise noted)
A
Parameter
Drain-Source voltage
Gate-Source voltage
Drain current
Power dissipation
Thermal resistance form junction to ambient
Junction temperature range
Storge temperature range
Symbol
V
DS
V
GS
I
D
P
D
R
θJA
T
J
T
STG
Value
60
20
340
0.15
833
-40 to +150
-55 to +150
Unit
V
V
mA
W
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
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Page 1
MOSFET
Electrical Characteristics
(at T =25°C unless otherwise noted)
A
Parameter
Static Characteristics
Drain-Source breakdown voltage
Gate-Threshold voltage*
Zero gate voltage drain current
Gate-Source leakage current
Conditions
Symbol
Min
Typ
Max
Unit
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 1mA
V
DS
= 48V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
GS
= 4.5V, I
D
= 200mA
V
DS
V
GS(th)
I
DSS
I
GSS1
R
DS(ON)
60
1
V
2.5
1
±10
5.3
V
V
µ
A
µA
Drain-Source on-resistance*
V
GS
= 10V, I
D
= 500mA
Diode forward voltage
Recovered charge
Dynamic Characteristics**
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching Characteristics**
Turn-on delay time
Turn-off delay time
Reverse recovery time
Gate-Source Zener Diode
Gate-Source breakdown voltage
Note:
* Pulse test; pulse width
≤300µs,
duty cycle
≤ 2%.
** These parameters have no way to verify.
I
gs
= ±1mA (Open Drain)
V
GS
= 10V, V
DD
= 50V, R
G
=50Ω,
R
GS
= 50Ω, R
L
= 250Ω
V
GS
= 0V, I
S
= 300mA, V
R
= 25V
dls/d
t
= -100A/µs
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
GS
= 0V, I
S
= 300mA
V
GS
= 0V, I
S
= 300mA, V
R
= 25V
dls/dt = -100A/µs
Ω
5
1.5
30
V
nC
V
SD
Qr
C
iss
C
oss
C
rss
40
30
10
pF
pF
pF
t
d(on)
t
d(off)
trr
30
10
15
ns
ns
ns
BV
GSO
±21.5
±30
V
Company reserves the right to improve product design , functions and reliability without notice.
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Page 2
MOSFET
RATING AND CHARACTERISTIC CURVES (2N7002KDW-G)
Fig.1 - Output Characteristics
1.2
V
GS
= 10V, 7V, 6V, 5V
Fig.2 - Transfer Characteristics
1.2
Ta=25°C
Pulsed
1.0
0.8
V
GS
= 4V
1.0
Drain Current, I
D
(A)
0.8
0.6
0.4
0.2
Ta=25°C
Pulsed
Drain Current, I
D
(A)
0.6
0.4
0.2
V
GS
= 3V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
6
Drain To Source Voltage, V
DS
(V)
Gate To Source Voltage, V
GS
(A)
Fig.3 - On-Resistance VS.
Drain Current
5
Ta=25°C
Pulsed
Fig.4 - On-Resistance VS. Gate-Source Voltage
10
Ta=25°C
Pulsed
On-Resistance, R
DS(ON)
(Ω)
3
On-Resistance, R
DS(ON)
(Ω)
4
8
6
I
D
= 500mA
2
V
GS
= 4.5V
4
1
V
GS
= 10V
2
0
0
300
600
900
1200
1500
0
0
2
4
6
8
10
Drain Current, I
D
(mA)
Gate To Source Voltage, V
GS
(V)
Fig.5 - I
S
— V
SD
10
Ta=25°C
Pulsed
Source Current, Is (A)
1
0.1
0.01
1E-3
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage, V
SD
(V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR50
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Page 3
MOSFET
Reel Taping Specification
d
F
B
E
W
C
P
A
12
0
o
P0
P1
D
2
D
1
D
W
1
SYMBOL
A
2.25
±
0.05
0.089
±
0.002
B
2.55
±
0.05
0.100
±
0.002
C
1.20
±
0.05
0.047
±
0.002
d
1.50
±
0.10
0.059
±
0.004
D
178.00
±
2.00
7.008
±
0.079
D
1
54.40
±
1.00
2.142
±
0.039
D
2
13.00
±
1.00
0.512
±
0.039
SOT-363
(mm)
(inch)
SYMBOL
E
1.75
±
0.10
0.069
±
0.004
F
3.50
±
0.10
0.138
±
0.004
P
4.00
±
0.10
0.157
±
0.004
P
0
4.00
±
0.10
0.157
±
0.004
P
1
2.00
±
0.10
W
8.00
+
0.30 /
–0.10
W
1
12.30
±
1.00
SOT-363
(mm)
(inch)
0.079
±
0.004
0.315
+
0.012 /
–0.004
0.484
±
0.039
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR50
REV:A
Page 4
MOSFET
Marking Code
6
5
4
Part Number
2N7002KDW-G
Marking Code
. 72K
.
1
72K
2
3
Suggested PAD Layout
SOT-363
SIZE
(mm)
A
B
C
D
0.40
0.80
0.65
1.94
(inch)
0.016
0.031
0.026
B
0.076
A
D
C
Standard Packaging
REEL PACK
Case Type
REEL
( pcs )
Reel Size
(inch)
SOT-363
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR50
REV:A
Page 5
Microcontroller MCU
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