General Purpose Transistor
2SA1213-G Series
(PNP)
RoHS Device
Features
-Small flat package.
-Power amplifier and switching
-
applications.
-Low saturation voltage.
-High speed switching time.
0.102(2.60)
0.091(2.30)
1 : Base
2 : Collector
3 : Emitter
SOT-89-3L
0.181(4.60)
0.173(4.40)
0.061(1.55)
REF.
1
2
3
0.023(0.58)
0.016(0.40)
0.167(4.25)
0.155(3.94)
Maximum Ratings
(at TA=25°C unless otherwise noted)
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Continuous current
Collector power dissipation
Thermal resistance from
junction to ambient
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
Tstg
Value
-50
-50
-5
-2
500
250
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
0.020(0.52)
0.013(0.32)
0.060(1.50)
TYP.
0.118(3.00)
TYP.
0.063(1.60)
0.055(1.40)
0.047(1.20)
0.035(0.90)
0.017(0.44)
0.014(0.35)
Dimensions in inches and (millimeter)
°C
Electrical Characteristics
(at T =25°C unless otherwise noted)
A
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Conditions
I
C
=-0.1mA , I
E
=0
I
C
=-10mA , I
B
=0
I
E
=-0.1mA , I
C
=0
V
CB
=-50V , I
E
=0
V
EB
=-5V , I
C
=0
V
CE
=-2V , I
C
=-500mA
V
CE
=-2V , I
C
=-2A
I
C
=-1A , I
B
=-50mA
I
C
=-1A , I
B
=-50mA
V
CB
=-10V , IE=0 , f=1MHZ
V
CE
=-2V , I
C
=-0.5A
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
-50
-50
-5
Typ
Max
Unit
V
V
V
-100
-100
70
240
nA
nA
h
FE
20
V
CE
(sat)
V
BE
(sat)
Cob
f
T
100
40
-0.5
-1.2
V
V
P
F
MH
Z
Classification Of h
FE
Part No.
Range
Marking
2SA1213O-G
70-140
NO
2SA1213Y-G
120-240
NY
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General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (2SA1213-G)
Fig.1 -
Static Characteristic
-1000
COMMON
-500uA
EMITTER
-450uA
Ta=25°C
Fig.2 - h
FE—
I
C
1000
COMMON EMITTER
V
CE
=-2V
-6mA
-5.4mA
Collector Current, (mA)
-800
-4.8mA
DC Current Gain, h
FE
-4.2mA
-3.6mA
Ta=100°C
-600
-3mA
-2.4mA
100
Ta=25°C
-400
-1.8mA
-1.2mA
-200
IB=-600uA
-0
-0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
10
-1
-10
-100
-1000-2000
Collector-Emitter Voltage, (V)
Collector Current , (mA)
Fig.3 - V
CEsat —
I
C
-1000
-1000
Fig.4 - V
BEsat —
I
C
Collector-Emtter Saturation Voltage
,
V
CEsat
(mV)
Base-Emitter Saturation Voltage
, VBEsat(V)
Ta=25°C
-300
Ta=100°C
-100
Ta=100°C
-30
Ta=25°C
β=20
β=20
-10
-1
-10
-100
-1000
-200
-1
-10
-100
-1000
Collector Current, Ic (mA)
Collector Current, Ic (mA)
Fig.5 - I
C
— V
BE
-1000
1000
Fig.6 - C
ob
/C
ib
— V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
Ta=25°C
Collector Current, (mA)
-100
Capacitance, (pF)
V
CE
=-2V
100
Ta=100°C
-10
Ta=25°C
-1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
10
-0.1
-1
-10
-20
Base-Emmiter Voltage, V
BE
(V)
Reverse Voltage, (V)
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Page 2
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (2SA1213-G)
Fig.7 - P
C
— Ta
600
Collector Power Dissipation, (mW)
500
400
300
200
100
0
0
25
50
75
100
125
150
Ambient Temperature , Ta (°C)
Suggested PAD Layout
SOT-89-3L
SIZE
(mm)
A
B
C
D
E
F
G
H
I
2.60
1.40
4.40
3.20
1.90
1.40
0.80
0.90
1.50
(inch)
0.102
0.055
0.173
0.126
0.075
0.055
0.032
0.035
0.059
I
H
F
G
45°
E
C
D
A
B
Standard Packaging
REEL PACK
Case Type
REEL
( pcs )
Reel Size
(inch)
SOT-89-3L
1,000
7
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General Purpose Transistor
Reel Taping Specification
12
0
o
D
2
D
1
D
W
1
SYMBOL
A
4.85
±
0.10
0.191
±
0.004
B
4.45
±
0.10
0.175± 0.004
C
1.85
±
0.10
0.073
±
0.004
d
1.50
+
0.10
0.059
+
0.004
D
180
±
2.00
7.087
±
0.079
D
1
60.00
±
1.00
2.362
±
0.039
D
2
R32.00
±
1.00
1.260
±
0.039
SOT-89-3L
(mm)
(inch)
SYMBOL
E
1.75
±
0.10
0.069
±
0.004
F
5.50
±
0.10
0.217
±
0.004
P
8.00
±
0.10
0.315
±
0.004
P
0
4.00
±
0.10
0.158
±
0.004
P
1
2.00
±
0.10
W
12.00
+
0.30 /
–0.10
W
1
16.50
±
1.00
SOT-89-3L
(mm)
(inch)
0.079
±
0.004
0.472
+
0.012 /
–0.004
0.650
±
0.039
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR42
REV: A
Page 4
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