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HRP80N06K

Description
60V N-Channel Trench MOSFET
File Size947KB,8 Pages
ManufacturerSEMIHOW
Websitehttp://www.semihow.com/
Download Datasheet View All

HRP80N06K Overview

60V N-Channel Trench MOSFET

HRP80N06K
December 2014
BV
DSS
= 60 V
HRP80N06K
60V N-Channel Trench MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Excellent Switching Characteristics
Unrivalled Gate Charge : 90 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 6.3
(Typ.) @V
GS
=10V
R
DS(on) typ
=
6.3mΩ
I
D
= 114 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
100% Avalanche Tested
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
T
C
=25℃ unless otherwise specified
Parameter
Value
60
Units
V
A
A
A
V
mJ
mJ
W
W/℃
– Continuous (T
C
= 25℃)
– Continuous (T
C
= 100℃)
– Pulsed
(Note 1)
114
80
400
±25
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Power Dissipation (T
C
= 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
(Note 2)
(Note 1)
340
20
200
1.33
-55 to +175
300
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Parameter
Typ.
--
0.5
--
Max.
0.75
--
62.5
℃/W
Units
SEMIHOW REV.A0,December 2014
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