2SB868_15 datasheet, PDF - EEWORLD Datasheet

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2SB868_15: DescriptionSilicon PNP Power Transistors; File Size46KB，3 Pages; ManufacturerJinmei; Websitehttp://www.jmnic.com/

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2SB868_15 Overview

Silicon PNP Power Transistors

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JMnic

Product Specification

Silicon PNP Power Transistors

2SB868

DESCRIPTION

・With

TO-220C package

・Complement

to type 2SD960

・Low

collector saturation voltage

・High

collector current capability

APPLICATIONS

・For

power switching applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Fig.1 simplified outline (TO-220) and symbol

・

Absolute maximum ratings(Ta=25

℃)

SYMBOL

CBO

CEO

EBO

stg

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Collector dissipation

Junction temperature

Storage temperature

=25℃

Open emitter

Open base

Open collector

CONDITIONS

VALUE

-130

-80

-7

-4

-8

150

-50~150

UNIT

℃

2SB868_15 Related Products

	2SB868_15	2SB868_2014
Description	Silicon PNP Power Transistors	Silicon PNP Power Transistors

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