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IMT2A

Description
General purpose (dual transistors)
CategoryDiscrete semiconductor    The transistor   
File Size58KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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IMT2A Overview

General purpose (dual transistors)

IMT2A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage40 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G6
JESD-609 codee1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
EMT3 / IMT3A
Transistors
General purpose (dual transistors)
EMT3 / IMT3A
Features
1) Two 2SA1037AK chips in a EMT or SMT package.
External dimensions
(Unit : mm)
EMT3
0.22
(4)
(5)
(6)
(3)
(2)
EMT3
(3)
(2)
(1)
IMT3A
(4)
(5)
(6)
1.2
1.6
(1)
0.13
Tr
2
Tr
1
Tr
2
Tr
1
(4)
(5)
(6)
(3)
(2)
(1)
Each lead has same dimensions
ROHM : EMT6
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗1
120mW per element must not be exceeded.
∗2
200mW per element must not be exceeded.
IMT3A
0.95 0.95
1.9
2.9
0.8
0~0.1
(6)
V
EBO
I
C
EMT3
IMT3A
−6
−150
150(TOTAL)
300(TOTAL)
150
−55
to
+150
V
mA
mW
0.15
(4)
1.6
∗2
Tj
Tstg
°C
°C
0.3Min.
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMT3
EMT6
T3
T2R
8000
IMT3A
SMT6
T3
T108
3000
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗Transition
frequency of the device.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−60
−50
−6
120
Typ.
140
4
Max.
−0.1
−0.1
−0.5
560
5
Unit
V
V
V
µA
µA
V
MHz
pF
I
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−60V
V
EB
=−6V
Conditions
I
C
/I
B
=−50mA/−5mA
V
CE
=−6V,
I
C
=−1mA
V
CE
=−12V,
I
E
=2mA,
f=100MHz
V
CE
=−12V,
I
E
=0A,
f=1MHz
1.1
P
C
∗1
2.8
(3)
V
CEO
−50
V
(5)
(2)
V
CBO
−60
V
0.3
(1)
Symbol
Limits
Unit
0.5
0.5 0.5
1.0
1.6
Equivalent circuits
Rev.A
1/2

IMT2A Related Products

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Description General purpose (dual transistors) General purpose (dual transistors) General purpose (dual transistors) General purpose (dual transistors) Compact air cylinder
Is it Rohs certified? conform to conform to conform to conform to -
Reach Compliance Code compli compli compli compli -
Maximum collector current (IC) 0.1 A 0.15 A 0.15 A 0.1 A -
Minimum DC current gain (hFE) 120 120 120 120 -
JESD-609 code e1 e2 e2 e1 -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C -
Polarity/channel type PNP PNP PNP PNP -
surface mount YES YES YES YES -
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Copper (Sn/Cu) Tin/Copper (Sn/Cu) Tin/Silver/Copper (Sn/Ag/Cu) -
Maker - ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor -

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