IRFM250 datasheet, PDF - EEWORLD Datasheet

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IRFM250: Description27.4 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA; CategoryDiscrete semiconductor The transistor; File Size198KB，7 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRFM250 Overview

27.4 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

IRFM250 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	500 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	27.4 A
Maximum drain-source on-resistance	0.105 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	R-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	110 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD-90554F

POWER MOSFET

THRU-HOLE (TO-254AA)

Product Summary

Part Number

IRFM250

JANTX2N7225

JANTXV2N7225

REF:MIL-PRF-19500/592

200V, N-CHANNEL

HEXFET

MOSFET TECHNOLOGY

DS(on)

0.100

Ω

27.4A

HEXFET

MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state

resistance combined with high transconductance.

HEXFET

transistors also feature all of the well-established advantages

of MOSFETs, such as voltage control, very fast switching,

ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as

switching power supplies, motor controls, inverters,

choppers, audio amplifiers, high energy pulse circuits, and

virtually any application where high reliability is required.

The

HEXFET

transistor’s totally isolated package eliminates

the need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-254AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light-weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 10V, TC = 25°C

ID @ VGS = 10V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

For footnotes refer to the last page

300 (0.063 in.(1.6mm) from case for 10s)

9.3 (Typical)

27.4

110

150

1.2

±20

500

27.4

5.0

-55 to 150

Units

W/°C

V/ns

°C

www.irf.com

10/25/11

IRFM250 Related Products

	IRFM250	IRFM250UPBF	IRFM250PBF
Description	27.4 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA	Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN	Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
Is it lead-free?	Contains lead	Lead free	Lead free
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	unknow	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	500 mJ	500 mJ	500 mJ
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V	200 V
Maximum drain current (ID)	27.4 A	27.4 A	27.4 A
Maximum drain-source on-resistance	0.105 Ω	0.105 Ω	0.105 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA	TO-254AA	TO-254AA
JESD-30 code	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	110 A	110 A	110 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Other features	HIGH RELIABILITY	-	HIGH RELIABILITY
Is it Rohs certified?	-	conform to	conform to
Maximum operating temperature	-	150 °C	150 °C
Maximum power consumption environment	-	150 W	150 W
Maximum off time (toff)	-	300 ns	300 ns
Maximum opening time (tons)	-	225 ns	225 ns

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