DMG2301L
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
120mΩ @ V
GS
= -4.5V
-20V
150mΩ @ V
GS
= -2.5V
-3A
I
D
max
T
A
= +25°
C
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
NEW PRODUCT
NEW PRODUCT
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over
Leadframe. Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
Copper
Backlighting
Power Management Functions
DC-DC Converters
Motor Control
D
SOT23
D
G
G
S
S
Top View
Internal Schematic
Top View
Ordering Information
(Note 4)
Part Number
DMG2301L-7
DMG2301L-13
Notes:
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
21M = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
Feb
2
2015
C
Mar
3
Apr
4
2016
D
May
5
Jun
6
2017
E
Jul
7
2018
F
Aug
8
Sep
9
2019
G
Oct
O
Nov
N
2020
H
Dec
D
DMG2301L
Document number: DS37540 Rev. 3 - 2
1 of 6
www.diodes.com
September 2015
© Diodes Incorporated
DMG2301L
Maximum Ratings
(@T
A
= +25° unless otherwise specified)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= -4.5V
Pulsed Drain Current (Note 6)
Drain-Source Diode Forward Current ( t < 5 sec)
Steady
State
T
A
= +25°
C
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
Value
-20
±8
-3
-1
-10
-0.75
Units
V
V
A
A
A
NEW PRODUCT
NEW PRODUCT
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
A
= +25° (Note 5)
C
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J,
T
STG
Value
1.5
83
-55 to +150
Unit
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified)
C,
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
-20
-0.4
Typ
476
53
45
5.5
0.9
1.8
5
10
30
20
Max
-1.0
±100
-1.2
120
150
-1.2
Unit
V
µA
nA
V
mΩ
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -16V, V
GS
= 0V
V
GS
=
6V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -2.8A
V
GS
= -2.5V, I
D
= -2.0A
V
GS
= 0V, I
S
= -0.75A
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
T
J
= +25°
C
V
GS
= -4.5V, V
DS
= -6V, I
D
= -2.8A
V
DS
= -6V, V
GS
= -4.5V,
R
GEN
= 6Ω, I
D
= -1A
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG2301L
Document number: DS37540 Rev. 3 - 2
2 of 6
www.diodes.com
September 2015
© Diodes Incorporated
DMG2301L
10.0
V
GS
= -3.0V
10
V
DS
= -5V
T
A
= -55
o
C
T
A
= 25
o
C
T
A
= 150
o
C
9.0
V
GS
= -4.0V
8.0
I
D
, DRAIN CURRENT (A)
7.0
6.0
5.0
4.0
V
GS
= -2.0V
V
GS
= -4.5V
V
GS
= -2.5V
8
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
6
T
A
= 85
o
C
V
GS
= -8.0V
4
NEW PRODUCT
NEW PRODUCT
3.0
2.0
1.0
0.0
0
1
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
3
V
GS
= -1.2V
V
GS
= -1.5V
2
V
GS
= -1.0V
0
0
0.5
1
1.5
2
2.5
3
3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
1
3
4
5
6
7
8
9
10
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs Drain Current
and Gate Voltage
2
V
GS
= -4.5V
V
GS
= -2.5V
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
2
4
6
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
8
I
D
= -2.0A
I
D
= -2.8A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.15
T
A
= 150
o
C
1.8
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
V
GS
= -4.5V
0.12
T
A
= 125
o
C
1.6
V
GS
= -2.5V, I
D
= -2.0A
0.09
T
A
= 85
o
C
T
A
= 25
o
C
1.4
1.2
V
GS
= -4.5V, I
D
= -3.0A
0.06
T
A
= -55
o
C
1
0.03
0.8
0
0
4
6
8
10
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs Drain Current
and Temperature
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2
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6 On-Resistance Variation with Temperature
September 2015
© Diodes Incorporated
DMG2301L
Document number: DS37540 Rev. 3 - 2
DMG2301L
0.2
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
0.18
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (Ω)
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7 On-Resistance Variation with Temperature
1000
V
GS
= 0V, T
A
= -55
o
C
V
GS
= -4.5V, I
D
= -3.0A
V
GS
= -2.5V, I
D
= -2.0A
1.5
1.2
0.9
I
D
= -1mA
0.6
I
D
= -250µA
NEW PRODUCT
NEW PRODUCT
0.3
0
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (℃)
Figure 8 Gate Threshold Variation vs Ambient
Temperature
10
C
iss
f = 1MHz
8
I
S
, SOURCE CURRENT (A)
V
GS
= 0V, T
A
= 25
o
C
6
V
GS
= 0V, T
A
= 85
o
C
C
T
, JUNCTION CAPACITANCE (pF)
100
C
oss
C
rss
4
V
GS
= 0V, T
A
= 125
o
C
V
GS
= 0V, T
A
= 150
o
C
2
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
8
1.5
10
0
2
4
6
8
10
12
14
16
18
20
V
DS
, DRAIN-SOURCE VOLTAGE(V)
Figure 10 Typical Junction Capacitance
100
R
DS(ON)
Limited
6
V
DS
= -6V, I
D
= -2.8A
I
D
, DRAIN CURRENT (A)
10
V
GS
(V)
4
1
DC
P
W
=10s
P
W
=1s
2
0.1
T
J(Max)
=150℃
T
A
=25℃
V
GS
=4.5V
Single Pulse
DUT on
1*MRP Board
P
W
=100ms
P
W
=10ms
P
W
=1ms
P
W
=100µs
0
0
1
2
5
6
7
Q
g
(nC)
Figure 11 Gate Charge
3
4
8
9
10
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMG2301L
Document number: DS37540 Rev. 3 - 2
4 of 6
www.diodes.com
September 2015
© Diodes Incorporated
DMG2301L
1
r(t), Transient Thermal Resistance
D=0.9
D=0.3
D=0.7
0.1
D=0.1
D=0.5
D=0.05
D=0.02
0.01
D=0.01
D=0.005
R
θJA
(t)=r(t) * R
θJA
R
θJA
=142
o
C/W
Duty Cycle, D=t1/t2
NEW PRODUCT
NEW PRODUCT
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
t1, Pulse Duration Time (sec)
Figure 13 Transient Thermal Resistance
10
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
H
J
All 7°
GAUGE PLANE
0.25
K1
K
a
A
M
L
L1
C
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
DMG2301L
Document number: DS37540 Rev. 3 - 2
5 of 6
www.diodes.com
September 2015
© Diodes Incorporated
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