UNISONIC TECHNOLOGIES CO., LTD
1NNPP10
100V COMPLEMENTARY
ENHANCEMENT MODE
MOSFET H-BRIDGE
(N-CHANNEL/P-CHANNEL)
DESCRIPTION
The UTC
1NNPP10
is a complementary enhancement mode
MOSFET H-BRIDGE, it uses UTC advanced technology to provide
customers low on resistance, low gate charge and low threshold
voltage.
The UTC
1NNPP10
is universally applied in DC-AC Inverters and
DC Motor control.
Power MOSFET
SOP-8
FEATURES
* N-CHANNEL
- R
DS(on)
=0.7Ω @V
GS
=10V, I
D
=1.5A
- R
DS(on)
=0.9Ω @V
GS
= 6V, I
D
=1A,
* P-CHANNEL
- R
DS(on)
=1.0Ω @V
GS
=-10V, I
D
=-0.6A
- R
DS(on)
=1.45Ω @V
GS
= -6V , I
D
=-0.5A
* High switching speed
* Low gate charge (N-ch: Typ.=2.9nC, P-ch: Typ.=3.5nC)
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1NNPP10L-S08-R
1NNPP10G-S08-R
1NNPP10L-S08-T
1NNPP10G-S08-T
Package
SOP-8
SOP-8
Packing
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-780.B
1NNPP10
PIN CONFIGURATION
Power MOSFET
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QW-R502-780.B
1NNPP10
ABSOLUTE MAXIMUM RATINGS
(
T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
Power MOSFET
RATINGS
UNIT
N-CHANNEL P-CHANNEL
Gate-Source Voltage
V
GSS
±20
±20
V
Drain-Source Voltage
V
DSS
100
-100
V
I
D
1
-0.85
A
Continuous V
GS
=10V, T
A
=25°C, t
≤10
sec
Drain Current
Pulsed
V
GS
=10V, T
A
=25°C (Note1)
I
DM
4.3
-3.64
A
T
A
=25°C
0.87
W
P
D
Power Dissipation
Derating
6.94
mW/°C
Junction Temperature
T
J
-55~+150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
SYMBOL
RATINGS
UNIT
Junction to Ambient
θ
JA
144
°C/W
Notes: 1. Pulse width
≤
300μs; duty cycle
≤
2%. The pulse current is limited by the maximum junction temperature.
PARAMETER
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
FOR N-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance(Note 1)
Forward
Reverse
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=100V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=1.5A
V
GS
=6V, I
D
=1A
MIN TYP MAX UNIT
100
V
0.5 µA
+100 nA
-100 nA
4
0.7
0.9
138
12
6
2.9
0.7
1.0
1.8
1.5
4.1
2.1
1
4.3
0.95
V
Ω
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
2
DYNAMIC PARAMETERS
Input Capacitance (Note 3)
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance (Note 3)
C
OSS
Reverse Transfer Capacitance (Note 3)
C
RSS
SWITCHING PARAMETERS
Total Gate Charge (Note 3)
Q
G
V
GS
=10V, V
DS
=50V, I
D
=1A
Gate to Source Charge (Note 3)
Q
GS
Gate to Drain Charge (Note 3)
Q
GD
Turn-ON Delay Time (Note 2, 3)
t
D(ON)
Rise Time (Note 2, 3)
t
R
V
DD
=30V, I
D
=1A, R
G
≈6Ω,
V
GS
=10V
Turn-OFF Delay Time (Note 2, 3)
t
D(OFF)
Fall-Time (Note 2, 3)
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
T
A
=25°C (Note 2)
Maximum Body-Diode Pulsed Current
I
SM
T
A
=25°C (Note 3)
Drain-Source Diode Forward Voltage (Note 1)
V
SD
I
S
=1.5A, V
GS
=0V
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QW-R502-780.B
1NNPP10
ELECTRICAL CHARACTERISTICS(CONT.)
FOR P-CHANNEL
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance(Note 1)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
I
D
=-250µA, V
GS
=0V
V
DS
=-100V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
DS
=V
GS
, I
D
=-250µA
V
GS
=-10V, I
D
=-0.6A
V
GS
=-6V, I
D
=-0.5A
Power MOSFET
MIN TYP MAX UNIT
-100
V
-0.5 µA
+100 nA
-100 nA
-4
1
1.45
141
13.1
10.8
3.5
0.6
1.6
1.6
2.1
5.9
3.3
-0.85
-3.64
-0.85 -0.95
V
Ω
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
-2
DYNAMIC PARAMETERS
Input Capacitance (Note 3)
C
ISS
V
GS
=0V, V
DS
=-25V,
Output Capacitance (Note 3)
C
OSS
f=1.0MHz
Reverse Transfer Capacitance (Note 3)
C
RSS
SWITCHING PARAMETERS
Total Gate Charge (Note 3)
Q
G
V
GS
=-10V,V
DS
=-50V,
Gate to Source Charge (Note 3)
Q
GS
I
D
=-0.6A
Gate to Drain Charge (Note 3)
Q
GD
Turn-ON Delay Time (Note 2, 3)
t
D(ON)
Rise Time (Note 2, 3)
t
R
V
DD
=-30V, I
D
=-1A, R
G
≈6Ω,
V
GS
=-10V
Turn-OFF Delay Time (Note 2, 3)
t
D(OFF)
Fall-Time (Note 2, 3)
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
T
A
=25°C (Note 2)
Maximum Body-Diode Pulsed Current
I
SM
T
A
=25°C (Note 3)
Drain-Source Diode Forward Voltage (Note 1)
V
SD
I
S
=-0.7A, V
GS
=0V
Notes: 1. Measured under pulsed conditions. Pulse width
≤
300μs; duty cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature
3. For design aid only, not subject to production testing
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QW-R502-780.B
1NNPP10
TEST CIRCUITS AND WAVEFORMS
V
GS
Q
G
10V
V
DS
Q
GS
Same Type
as DUT
12V
200nF
50kΩ
V
GS
DUT
300nF
Power MOSFET
Q
GD
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
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QW-R502-780.B
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