DISCRETE SEMICONDUCTORS
DATA SHEET
BFG67; BFG67/X; BFG67/XR
NPN 8 GHz wideband transistors
Product specification
Supersedes data of September 1995
1998 Oct 02
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
FEATURES
•
High power gain
•
Low noise figure
•
High transition frequency
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the GHz
range, such as satellite TV tuners and
portable RF communications
equipment.
DESCRIPTION
NPN silicon transistor in a 4-pin,
dual-emitter SOT143B plastic
package. Available with in-line emitter
pinning (BFG67) and cross emitter
pinning (BFG67/X). Version with
reverse pinning (BFG67/XR) also
available on request.
MARKING
TYPE NUMBER
BFG67 (Fig.1)
BFG67/X (Fig.1)
BFG67/XR (Fig.2)
CODE
V3
V12
V26
Fig.1
Simplified outline
SOT143B.
handbook, 2 columns
4
BFG67; BFG67/X; BFG67/XR
PINNING
DESCRIPTION
PIN
BFG67
1
2
3
4
collector
base
emitter
emitter
BFG67/X
collector
emitter
base
emitter
BFG67/XR
collector
emitter
base
emitter
3
handbook, 2 columns
3
4
1
Top view
2
MSB014
2
Top view
1
MSB035
Fig.2
Simplified outline
SOT143R.
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
P
tot
C
re
f
T
G
UM
F
PARAMETER
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power
gain
noise figure
T
s
≤
65
°C
I
C
= i
c
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 8 V; f = 500 MHz
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 1 GHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 1 GHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 2 GHz
open base
CONDITIONS
−
−
−
0.5
8
17
1.3
2.2
TYP.
MAX.
10
50
300
−
−
−
−
−
V
mA
mW
pF
GHz
dB
dB
dB
UNIT
1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
thermal resistance from junction to soldering point
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
BFG67; BFG67/X; BFG67/XR
CONDITIONS
open emitter
open base
open collector
T
s
≤
65
°C;
see Fig.3; note 1
−
−
−
−
−
MIN.
MAX.
20
10
2.5
50
380
150
175
V
V
V
UNIT
mA
mW
°C
°C
−65
−
CONDITIONS
note 1
VALUE
290
UNIT
K/W
MBC984 - 1
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0
50
100
150
Ts
(
o
C)
200
Fig.3 Power derating curve.
1998 Oct 02
3
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
PARAMETER
collector leakage current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power
gain; note 1
CONDITIONS
V
CB
= 5 V; I
E
= 0
I
C
= 15 mA; V
CE
= 5 V
BFG67; BFG67/X; BFG67/XR
MIN.
−
60
−
−
−
−
−
−
−
−
−
−
−
TYP.
100
8
0.7
1.3
0.5
17
10
1.3
1.7
2.5
3
MAX.
50
−
−
−
−
−
−
−
−
−
−
−
UNIT
nA
GHz
pF
pF
pF
dB
dB
dB
dB
dB
dB
I
C
= 15 mA; V
CE
= 8 V; f = 500 MHz
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= i
c
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 1 GHz
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 2 GHz
F
noise figure
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V
T
amb
= 25
°C;
f = 1 GHz
Γ
s
=
Γ
opt
; I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 1 GHz
I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 2 GHz; Z
S
= 60
Ω
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 2 GHz; Z
S
= 60
Ω
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
S
21 2
=
10 log -------------------------------------------------------------- dB.
(
1
–
S
11 2
) (
1
–
S
22 2
)
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
MBB301
MBB302
120
handbook, halfpage
h FE
0.8
handbook, halfpage
Cre
(pF)
0.6
80
0.4
40
0.2
0
0
20
40
I C (mA)
60
0
0
4
8
12
VCB (V)
16
V
CE
= 5 V.
I
C
= i
c
= 0; f = 1 MHz.
Fig.4
DC current gain as a function of collector
current.
Fig.5
Feedback capacitance as a function of
collector-base voltage.
handbook, halfpage
10
MBB303
MBB304
handbook,
25
halfpage
fT
(GHz)
8
gain
(dB)
20
MSG
G max
6
G UM
15
4
10
2
5
0
0
10
20
30
I C (mA)
40
0
0
10
20
30
IC (mA)
40
V
CE
= 8 V; T
amb
= 25
°;
f = 2 GHz.
V
CE
= 8 V; f = 1 GHz.
G
UM
= maximum unilateral power gain;
MSG = maximum stable gain;
G
max
= maximum available gain.
Fig.6
Transition frequency as a function of
collector current.
Fig.7 Gain as a function of collector current.
1998 Oct 02
5
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