High Voltage MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
IXTA 1N100
IXTP 1N100
R
DS(on)
V
DSS
I
D25
= 1000
= 1.5
= 11
V
A
Ω
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
Maximum Ratings
1000
1000
±30
±40
1.5
6
1.5
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
g
°C
TO-220AB (IXTP)
GD
D (TAB)
S
TO-263 AA (IXTA)
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 18
Ω
T
C
= 25°C
6
200
3
54
-55 ... +150
150
-55 ... +150
G
S
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Mounting torque
1.13/10 Nm/lb.in.
4
300
Features
International standard packages
High voltage, Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Flyback inverters
DC choppers
High frequency matching
Advantages
Space savings
High power density
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1000
2.5
4.5
±100
T
J
= 25°C
T
J
= 125°C
25
500
11
V
V
nA
µA
µA
Ω
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 25
µA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 1.0A
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2004 IXYS All rights reserved
98545C(08/04)
IXTA 1N100
IXTP 1N100
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
0.8
1.5
400
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
37
13
18
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 1A
R
G
= 18Ω,
(External)
19
20
18
14.5
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 1A
3.0
7.5
2.3
(IXTP)
0.50
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
TO-220 AD Dimensions
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 20 V; I
D
= 1.0A, pulse test
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Test Conditions
V
GS
= 0 V
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1.5
6
1.8
710
A
A
V
ns
TO-263 AA Outline
Repetitive; pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= I
S
, -di/dt = 100 A/µs, V
R
= 100 V
1.
2.
3.
4.
Gate
Drain
Source
Drain
Bottom Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min.
Max.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Inches
Min.
Max.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
IXTA 1N100
IXTP 1N100
Fig. 1. Output Characteris tics
@ 25
º
C
1.0
0.9
0.8
0.7
V
GS
= 10V
8V
7V
6V
2.0
5.5V
2.5
V
GS
= 10V
8V
7V
6V
1.5
5.5V
1.0
Fig. 2. Extended Output Characte ris tics
@ 25
º
C
I
D
- Amperes
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
1
2
3
4
5
6
7
8
9
10
4.5V
5V
I
D
- Amperes
0.5
5V
4.5V
0.0
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
Fig. 3. Output Characte ris tics
@ 125
º
C
1.0
0.9
0.8
V
GS
= 10V
7V
6V
5V
2.6
2.4
2.2
V
GS
= 10V
V
D S
- Volts
Fig. 4. Norm alized R
DS(on
)
vs.
Junction Tem pe rature
R
D S ( o n )
- Normalized
I
D
- Amperes
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
2
4
6
4.5V
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
I
D
= 1A
I
D
= 1.5A
V
D S
- Volts
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
1.6
1.4
1.2
Fig. 5. Norm alized R
DS(on)
vs . I
D
2.4
2.2
V
GS
= 10V
T
J
= 125ºC
R
D S ( o n )
- Normalized
2.0
I
D
- Amperes
T
J
= 25ºC
1.8
1.6
1.4
1.2
1.0
0.8
0
0.5
1.0
0.8
0.6
0.4
0.2
0.0
I
D
- Amperes
1
1.5
2
2.5
-50
-25
T
C
- Degrees Centigrade
0
25
50
75
100
125
150
IXTA 1N100
IXTP 1N100
Fig. 7. Input Adm ittance
1.8
1.6
1.4
2.0
2.5
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.5
4
4.5
5
5.5
6
T
J
= 125ºC
25ºC
-40ºC
T
J
= -40ºC
1.5
25ºC
125ºC
1.0
0.5
0.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V
G S
- Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
4.0
3.5
3.0
10
9
8
V
DS
= 500V
I
D
= 1A
I
G
= 1mA
I
D
- Amperes
Fig. 10. Gate Charge
I
S
- Amperes
7
V
G S
- Volts
T
J
= 25ºC
0.7
0.8
0.9
2.5
2.0
1.5
1.0
0.5
0.0
0.4
0.5
0.6
T
J
= 125ºC
6
5
4
3
2
1
0
V
S D
- Volts
0
2
4
6
8
10
12
14
16
Q
G
- nanoCoulombs
Fig. 13. Maxim um Transient Therm al
Resistance
10.0
Fig. 11. Capacitance
1000
f = 1MHz
Capacitance - picoFarads
100
C oss
R
t h ) J C
- ºC / W
(
40
C iss
1.0
C rss
10
0
5
10
15
0.1
V
D S
- Volts
20
25
30
35
1
10
100
1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
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