Standard
Power MOSFET
V
DSS
IXTH / IXTM 5N100
IXTH / IXTM 5N100A
1000 V
1000 V
I
D25
5A
5A
R
DS(on)
2.4
Ω
2.0
Ω
N-Channel Enhancement Mode
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
1000
1000
±20
±30
V
TO-247 AD (IXTH)
E
V
V
V
A
A
TO-204 AA (IXTM)
W
°C
°C
°C
D
G
G = Gate,
S = Source,
D = Drain,
TAB = Drain
D (TAB)
T
C
= 25°C, pulse width limited by T
JM
Mounting torque
O
1000
2
T
J
= 25°C
T
J
= 125°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
BS
Test Conditions
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Symbol
O
I
GSS
I
DSS
R
DS(on)
±100
250
1
2.4
2.0
nA
µA
mA
Ω
Ω
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
l
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
l
l
5N100
5N100A
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
l
V
GS(th)
4.5
V
l
V
DSS
LE
T
5
20
180
-55 ... +150
150
-55 ... +150
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300
°C
Features
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
l
l
l
l
l
l
l
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
93009C (4/96)
1-4
IXTH 5 N100
IXTM 5 N100
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
4
6
2600
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
180
45
35
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
R
G
= 4.7
Ω,
(External)
20
100
30
88
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
21
38
100
50
200
80
130
30
70
S
pF
pF
pF
ns
ns
ns
ns
1
IXTH 5 N100A
IXTM 5 N100A
TO-247 AD (IXTH) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 • I
D25
, pulse test
2
3
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Test Conditions
V
GS
= 0 V
Repetitive; pulse width limited by T
JM
O
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
BS
I
F
= I
S
, -di/dt = 100 A/µs, V
R
= 100 V
LE
T
0.7
K/W
0.25
K/W
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
5
A
20
1.5
900
A
V
ns
Pins
O
E
nC
nC
nC
Dim.
A
A1
∅
b
∅
D
e
e1
Millimeter
Min.
Max.
6.4
11.4
3.42
.97
1.09
22.22
10.67 11.17
5.21
5.71
L
7.93
∅
p 3.84
4.19
∅p
1 3.84
4.19
q
30.15 BSC
R
13.33
R1
4.77
s
16.64 17.14
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185 .209
A
1
2.2
2.54
.087 .102
A
2
2.2
2.6
.059 .098
b
1.0
1.4
.040 .055
b
1
1.65
2.13
.065 .084
b
2
2.87
3.12
.113 .123
C
.4
.8
.016 .031
D 20.80 21.46
.819 .845
E
15.75 16.26
.610 .640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780 .800
L1
4.50
.177
∅
P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170 .216
S
6.15 BSC
242 BSC
TO-204AA (IXTM) Outline
1 - Gate
2 - Source
Case - Drain
Inches
Min. Max.
.250 .450
.135
.038 .043
.875
.420 .440
.205 .225
.312
.151 .165
.151 .165
1.187 BSC
.525
.188
.655 .675
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXTH 5 N100
IXTM 5 N100
IXTH 5 N100A
IXTM 5 N100A
Fig. 1 Output Characteristics
9
8
7
T
J
= 25°C
V
GS
= 10V
Fig. 2 Input Admittance
9
7V
8
7
I
D
- Amperes
I
D
- Amperes
6
5
4
3
2
1
0
6V
6
5
4
3
T
J
= 25°C
1
0
5
10
15
20
25
30
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
DS
- Volts
Fig. 3 R
DS(on)
vs. Drain Current
3.0
T
J
= 25°C
2.8
R
DS(on)
- Normalized
R
DS(on)
- Ohms
2.6
2.4
V
GS
= 10V
O
V
GS
= 15V
2.2
2.0
1.8
BS
0
2
4
6
8
10
LE
T
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
-50
-25
0
25
50
1.2
V
GS(th)
Fig. 4 Temperature Dependence
of Drain to Source Resistance
I
D
- Amperes
Fig. 5 Drain Current vs.
Case Temperature
7
6
5
4
3
2
1
O
1.1
BV/V
G(th)
- Normalized
I
D
- Amperes
5N100A
5N100
1.0
0.9
0.8
0.7
0.6
0
-50
-25
0
25
50
75
100 125 150
0.5
-50
T
C
- Degrees C
© 2000 IXYS All rights reserved
E
V
GS
- Volts
I
D
= 2.5A
2
75
100 125 150
T
J
- Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
BV
DSS
-25
0
25
50
75
100 125 150
T
J
- Degrees C
3-4
IXTH 5 N100
IXTM 5 N100
IXTH 5 N100A
IXTM 5 N100A
Fig.7 Gate Charge Characteristic Curve
10
9
8
7
V
DS
= 500V
I
D
= 2.5A
I
G
= 10mA
Fig.8 Forward Bias Safe Operating Area
10µs
10
Limited by R
DS(on)
100µs
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
80
I
D
- Amperes
V
GE
- Volts
1ms
1
10ms
0.1
E
1
10
100
100ms
1000
Gate Charge - nCoulombs
Fig.9 Capacitance Curves
2750
2500
2250
2000
1750
1500
1250
1000
750
500
250
0
C
iss
Capacitance - pF
f = 1 MHz
V
DS
= 25V
I
D
- Amperes
O
15
20
25
0.001
0.01
LE
T
9
8
7
6
5
4
3
2
1
0
0.0
T
J
= 125°C
V
DS
- Volts
Fig.10 Source Current vs. Source
to Drain Voltage
C
oss
C
rss
T
J
= 25°C
BS
0
5
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
CE
- Volts
V
DS
- Volts
Fig.11 Transient Thermal Impedance
1.000
Thermal Response - K/W
O
D=0.2
D=0.5
0.100
D=0.1
D=0.05
D=0.02
D=0.01
0.010
Single Pulse
0.001
0.00001
0.0001
0.1
1
10
Time - Seconds
© 2000 IXYS All rights reserved
4-4
Automotive Electronics
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