SBR820 THRU SBR8100
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· Single rectifier construction
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds, 0.25" (6.35mm) from case
CURRENT 8.0Amperes
VOLTAGE 20 to 100 Volts
TO-220A
.412
(10.5)
MAX.
.180
3.8 f +.2
HOLE THRU (4.6)
.248
(6.3) .595
(15.1)
MAX.
.550
.158 (14.0)
(4.0) MIN.
MAX.
.200
(5.08)
+
.108
(2.75)
.040
(1.0)
MAX.
.051 MAX.
(1.3)
.040 MAX.
(1.0)
.050
(1.27)
Mechanical Data
· Case : JEDEC TO-220A molded plastic body
· Terminals: Lead solderable per
MIL-STD-750, Method 2026
· Polarity: As marked
· Mounting Position: Any
· Weight: 0.08ounce, 2.24 grams
PIN 1
+
CASE
PIN 2
Case Positive
+
CASE
PIN 2
Case Negative
Suffix "R"
PIN 1
.120
(3.05)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(see Fig. 1)
Repetitive peak forward current(square wavr,
20KHZ) at Tc=105℃
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 8.0A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
T
A
=25℃
T
A
=125℃
V
RRM
V
RMS
V
DC
I(
AV
)
I
FRM
I
FSM
SBR
820
20
14
20
SBR
830
30
21
30
SBR
840
40
28
40
SBR
850
50
35
50
8.0
16.0
150.0
SBR
860
60
42
60
SBR
880
80
56
80
SBR
8100
100
70
100
Units
Volts
Volts
Volts
Amps
Amps
Amps
V
F
I
R
Rθ
JC
T
J
T
STG
0.65
1.0
15
2.5
-65 to +125
0.75
0.80
0.85
Volts
mA
℃/W
50
-65 to +150
-65 to +150
℃
℃
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case
RATINGS AND CHARACTERISTIC CURVES SBR820-SBR8100
FIG.1-FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
40
──
SBR820-SBR840
- - - SBR850-SBR8100
AVERAGE FORWARD CURRENT
AMPERES
10
8.0
6.0
4.0
2.0
0
0
SINGLE PHASE
HALF WAVE 50Hz
INDUCTIVE OR
RESISTIVE LOAD
INSTANTANEOUS FORWARD CURRENT (AMPERES)
SBR820-SBR840
50
100
LEAD TEMPERATURE (℃)
150
SBR850-SBR8100
1.0
T
J
=25℃
PLUS WIDTH=300
㎲
1% DUTY CYCLE
FIG.4-TYPICAL JUNCTION CAPACITANCE
4000
2000
CAPACITANCE(pF)
1000
──
SBR820-SBR840
- - - SBR850-SBR8100
0.1
2
3
4
5
6
7
8
9
10
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
FIG.3-TYPICAL REVERSE CHARACTERISTICS
200
100
10
T
C
=150℃
0.1
0.4
1.0
10
40 60
100
REVERSE VOLTAGE. VOLTS
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
1.0
T
C
=125℃
FIG.5-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
150
PEAK FORWARD SURGE
CURRENT(AMPERES)
145
140
135
130
125
T
C
=75℃
0.1
T
C
=25℃
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0.01
──
SBR820-SBR840
- - - SBR850-SBR8100
1.0
2.0
5.0
10
20
50
100
0.001
20
40
60
80
100
120
140
NUMBER OF CYCLES AT 60Hz
PERCENT OF RATED PEAK REVERSE VOLTAGE(VOLTS)
Embedded System
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