D2575G36 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Wireless rf/communication> Optical fiber> D2575G36

D2575G36: DescriptionFiber Optic Device,; CategoryWireless rf/communication Optical fiber; File Size242KB，8 Pages; ManufacturerBroadcom

Download Datasheet Parametric View All

D2575G36 Overview

Fiber Optic Device,

D2575G36 Parametric

Parameter Name	Attribute value
Objectid	4004442370
Reach Compliance Code	compliant

D2575G36 Preview

Data Sheet

March 2006

D2575 High Power, up to 200 Km, Wavelength-Selected,

Direct Modulaled Isolated DFB Laser Module

Applications

Sonet/SDH OC-48/STM-16 applications

Very long reach (200KM)

Metro DWDM

Digital video

Description

The D2575-type Direct Modulated Isolated DFB

Laser Module contains an internally cooled, InGaAs,

MQW, distributed-feedback (DFB) laser designed for

1.5

µm

applications. Also, the D2575-type is a high-

performance, high-power directly modulated laser

designed for very low dispersion penalty at OC-48/

STM-16 (2.5Gb/s) data rates for a very long reach up

to 200 km. The D2575-type laser is provided at ITU-T

wavelength standard at 100 GHz spacing for WDM

applications.

D2575-type eliminates the need for optical amplifiers

in many DWDM applications.

The 1.5

µm

D2575 Laser Modules are available in a 14-pin,

hermetic, butterfly package.

Features

ITU wavelengths available from

1528.77 nm —1563.86 nm

SONET/SDH compatible up to OC-48/STM-16

Temperature tunable for precise wavelength

selection

Integrated optical isolator

High-performance, multiquantum well (MQW)

distributed-feedback (DFB) laser

Industry-standard, 14-pin butterfly package

Characterized at 2.488 Gb/s (NRZ)

InGaAs, PIN photodetector back-facet monitor

Low threshold current

High-reliability, hermetic packaging

Excellent long-term wavelength stability can elimi-

nate the need for external wavelength locker

Qualified to meet the intent of

Telcordia Technolo-

gies

* TR-NWT-000468

Telcordia Technologies

is a trademark of Telcordia Technolo-

gies, Inc.

D2575 High Power, up to 200 Km, Wavelength-Selected,

Direct Modulated Isolated DFB Laser Module

Data Sheet

March 2006

Description

(continued

)

Controlled Feedback

The module contains an internal optical isolator that

suppresses optical feedback in laser-based, fiber-optic

systems. Light reflected back to the laser is attenuated

a minimum of 30 dB.

Pin Information

Name

Thermistor

Laser dc Bias (Cathode) (–)

Back-facet Monitor Anode (–)

Back-facet Monitor Cathode (+)

Thermoelectric Cooler (+)*

Thermoelectric Cooler (–)

Case Ground

Laser Anode (+)

†

RF Laser Input Cathode (–)

Laser Anode (+)

†

Case Ground

Controlled Temperature

An integral thermoelectric cooler (TEC) provides stable

thermal characteristics. The TEC allows for heating

and cooling of the laser chip to maintain a temperature

of 25 °C for case temperatures from –40 °C to +75 °C.

The laser temperature is monitored by the internal

thermistor, which can be used with external circuitry to

control the laser chip temperature.

Controlled Power

An internal, InGaAs, PIN photodiode functions as the

back-facet monitor. The photodiode monitors emission

from the rear facet of the laser and, when used in con-

junction with control circuitry, can control optical power

launched into the fiber. Normally, this configuration is

used in a feedback arrangement to maintain consistent

laser output power.

* A positive current through the thermoelectric heat pump cools the

laser.

† Both leads should be grounded for optimum performance.

–

160 nH

–

10 kΩ

TEC

Standard Package

The laser module is fabricated in a 14-pin, hermetic,

metal/ceramic butterfly package that incorporates a

bias tee, which separates the dc-bias path from the RF

input. The RF input has a nominal 25

Ω

impedance.

The laser module is equipped with

SMF-28

type fiber.

The fiber has a 900 µm tight buffer jacket. Various con-

nectors and pigtail lengths are available.

CyOptics’ optoelectronic components are being quali-

fied to rigorous internal standards that are consistent

with

Telcordia Technologies

TR-NWT-000468. All

design and manufacturing operations are

ISO

* 9001

certified. The module is being fully qualified for central

office applications.

PACKAGE

GROUNDS

Ω

–

ISOLATOR

1-567F.b

Top view.

Figure 1. Circuit Schematic

ISO

is a registered trademark of The International Organization for

Standardization.

†

SMF-28

is a trademark of Corning Inc.

For additional information and latest specifications, see our website:

www.cyoptics.com

Data Sheet

March 2006

D2575 High Power, up to 200 Km, Wavelength-Selected,

Direct Modulated Isolated DFB Laser Module

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso-

lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess

of those given in the performance characteristics of the data sheet. Exposure to absolute maximum ratings for

extended periods can adversely affect device reliability.

Parameter

Laser Reverse Voltage

dc Forward Current

Operating Case Temperature Range

Storage Case Temperature Range*

Photodiode Reverse Voltage

Photodiode Forward Current

Package Thermistor Temperature**

Thermo-Electric Cooler in Heating Mode**

* Does not apply to shipping container.

**To prevent package over temperature conditions.

Symbol

RLMAX

FLMAX

stg

RPDMAX

FPDMAX

therm

TEC

Min

—

–40

—

Max

150

100

0.5

Unit

°C

Handling Precautions

Power Sequencing

To avoid the possibility of damage to the laser module

from power supply switching transients, follow this turn-

on sequence:

1. All ground connections

2. Most negative supply

3. Most positive supply

4. All remaining connections

Reverse the order for the proper turn-off sequence.

Mounting Instructions

The minimum fiber bend radius is 1.23 in (31.25 mm).

To avoid degradation in performance, mount the mod-

ule on the board as follows:

1. Place the bottom flange of the module on a flat heat

sink at least 0.5 in. x 1.180 in. (12.7 mm x 30 mm) in

size. The surface finish of the heat sink should be

better than 32 µin. (0.8 µm), and the surface flat-

ness must be better than 0.001 in. (25.4 µm). Using

thermal conductive grease is optional; however,

thermal performance can be improved by up to 5%

if conductive grease is applied between the bottom

flange and the heat sink.

2. Mount four #2-56 screws with Fillister heads

(M2-3 mm) at the four screw hole locations (see

Outline Diagram). The Fillister head diameter must

not exceed 0.140 in. (3.55 mm). Do not apply more

than 1 in./lb. of torque to the screws.

0.062 (1.58)

0.031 (0.79)

0.140

(3.56)

0.129 (3.28) R

0.041 (1.04)

1-532

Electrostatic Discharge

CAUTION: This device is susceptible to damage

as a result of electrostatic discharge.

Take proper precautions during both

handling and testing. Follow guide-

lines such as JEDEC Publication No.

108-A (Dec. 1988).

CyOptics employs a human-body model (HBM) for

ESD-susceptibility testing and protection-design evalu-

ation. ESD voltage thresholds are dependent on the

critical parameters used to define the model. A stan-

dard HBM (resistance = 1.5 kΩ, capacitance = 100 pF)

is widely used and, therefore, can be used for compari-

son purposes.

0.118

(3.00)

0.086

(2.18)

Note: Dimensions are in inches and (millimeters).

Figure 2. Fillister Head Screw

For additional information and latest specifications, see our website:

www.cyoptics.com

D2575 High Power, up to 200 Km, Wavelength-Selected,

Direct Modulated Isolated DFB Laser Module

Data Sheet

March 2006

D2575 Characteristics

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are

the result of engineering evaluations. Typical values are for information purposes only and are not part of the test-

ing requirements.

Table 1. Electrical Characteristics (at 25 °C laser temperature)

Parameter

Slope Efficiency

Threshold Current

Laser Forward Voltage

Laser Submount Temperature

Monitor Reverse-bias Voltage*

Monitor Current

Monitor Dark Current

Input Impedance

Thermistor Current

Resistance Ratio

†

Thermistor Resistance

TEC Current

TEC Voltage

TEC Capacity

Symbol

LASER

RMON

—

TEC

∆T

Test Conditions

=10dBm (CW)

—

= 10dBm (CW)

—

= 7dBm (Average)

= 0, V

RMON

= 5 V

—

= 25 °C

= 75 °C

= 75°C

= 75 °C

Min

0.12

—

0.25

—

9.1

9.5

—

Typ

0.15

1.3

—

0.7

0.01

—

0.6

1.3

—

Max

0.20

1.8

1.25

0.1

—

100

9.6

10.5

1.0

2.0

Unit

mW/mA

°C

µA

Ω

µA

—

kΩ

°C

* Standard operating condition is 5.0 V reverse bias.

† Ratio of thermistor resistance at 0 °C to thermistor resistance at 50 °C.

Table 2. Optical Characteristics (at 25 °C laser temperature)

Parameter

Peak Optical Output Power

Center Wavelength

(See Table 4)

Line Width (3 dB full width)

Side-mode Suppression Ratio

Optical Isolation

Wavelength Drift (EOL)

Center Wavelength Drift with

Case Temperature

Wavelength Temperature Tuning

Coefficient

Tracking Error

Table 3. Dispersion Performance

Parameter

Dispersion Penalty for Very Long Reach

Symbol

Test

Conditions

3600 ps/nm

Min

—

Typ

—

Max

2.0

Unit

Symbol

PEAK

λc

∆λ

SMSR

Test Conditions

—

= 25 °C

Min

10.0

1528.77

—

Typ

—

0.095

—

Max

—

1563.86

—

±0.1

—

Unit

dBm

MHz

pm/°C

nm/°C

Modulated at 2.5Gb/s at

rated power

—

= 0 °C to 75 °C

∆λ

Tested over

25-year lifetime

∆λ

/∆T

0 °C

≤

75 °C

—

= –20 °C/25 °C/75 °C

For additional information and latest specifications, see our website:

www.cyoptics.com

Data Sheet

March 2006

D2575 High Power, up to 200 Km, Wavelength-Selected,

Direct Modulated Isolated DFB Laser Module

Outline Drawings

Dimensions are in inches and (millimeters).

1.025 (26.04)

0.500 (12.70)

MIN

PIN 1

0.020 (0.51) TYP

TRADEMARK, CODE, LASER SERIAL NUMBER,

AND DATE CODE IN APPROX. AREA SHOWN

STRAIN

RELIEF

0.10 ± 0.002

(2.54 ± 0.051)

0.500

(12.70)

0.605

(15.37)

MAX

0.350

(8.89)

0.036

(0.91)

0.200

(5.08)

0.078 (1.98)

0.105 (2.67) DIA

TYP (4) PLACES

PIN 14

0.213 (5.40) TYP

0.100 (2.54) TYP

39.37 (1000.00)

MIN

2.03 (51.6)

0.180 (4.56)

0.820 (20.83)

0.700 (17.78)

0.863 (21.91)

0.575 (14.61)

0.260 (6.60)

0.10

(2.5)

0.056 (1.42)

0.365

(9.27)

MAX

1.180 (29.97)

HEAT SINK

0.215 (5.45)

0.030 (0.75)

0.215

(5.47)

REF

1-520.g

For additional information and latest specifications, see our website:

www.cyoptics.com

More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

Recommended Resources

Bidirectional thyristor dimming circuit

HILARITV brand RH-M302 electric shaver circuit diagram

50W halogen electronic ignition circuit diagram

Application circuit of eddy current sensor in steel plate width measurement

Try making an SRS effector circuit using an op amp

STEVAL-IDB007V1 appearance and composition analysis: Finally, I received the development board. Let's familiarize myself with the circuit diagram. It is a four-layer PCB. BLE (BlueNRG-1 and RF) does not occupy a large area on the board. The silkscreen m...; cruelfox ST - Low Power RF

STM32F10x read and write AT45DB041 SPI Flash: STM32F10x read and write AT45DB041 SPI Flash After working hard for most of the day, STM32 finally got through with reading and writing AT45DB041. Here is the MDK project file for testing AT45DB041 re...; shangxf TI Technology Forum

Essential for getting started with electronic design: I wandered around various forums and collected some information, and took a look at it myself. I think it’s pretty good....; 喵爱小鱼鱼 Analog electronics

LPC1000 series tutorials and examples: FROM Zhou Ligong is not only very helpful for lpc1114, but also has a good reference value for lpc1343. I pay tribute to the great Zhou Gong:) [TinyM0 supporting tutorial]* [TinyM0 supporting tutorial...; chenzhufly NXP MCU

Short circuit protection circuit!!!: Now I have built a power switching circuit using MOS. Considering that the user may accidentally short-circuit the output end, I want to add a short-circuit protection circuit. However, due to the boa...; Kkk- Power technology

【Activity Post】Learn Device Indicators Part 2: 【Activity Post】Learn Device Indicators Part 2First, let me briefly describe the activities:1. Every week we release a device type and publish some of the device indicators learned.I say "part" mainly ...; wstt Microcontroller MCU

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components