DF10G7M1N
ESD Protection Diodes
Silicon Epitaxial Planar
DF10G7M1N
1. Applications
ESD Protection for:
USB 2.0
USB 3.0
HDMI
SATA/eSATA
DisplayPort Interface
Digital Visual Interface (DVI)
MDDI
PCI Express
Note:
This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
2. Packaging and Internal Circuit
1 : I/O 1
2 : I/O 2
3 : GND
4 : I/O 3
5 : I/O 4
6 : NC
7 : NC
8 : NC
9 : NC
10 : NC
DFN10
Start of commercial production
1
2012-11
2014-04-14
Rev.5.0
DF10G7M1N
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
25
Characteristics
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
Junction temperature
Storage temperature
Symbol
V
ESD
T
j
T
stg
Rating
±8
150
-55 to 150
Unit
kV
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2
2014-04-14
Rev.5.0
DF10G7M1N
4. Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
25
V
RWM
: Working peak reverse
voltage
V
BR
: Reverse breakdown voltage
I
BR
: Reverse breakdown current
I
R
: Reverse current
V
C
: Clamp voltage
I
PP
: Peak pulse current
R
DYN
: Dynamic resistance
Fig. 4.1 Definitions of Electrical Characteristics
Characteristics
Working peak reverse voltage
Reverse breakdown voltage
Reverse current
Clamp voltage
Dynamic resistance
Total capacitance
Symbol
V
RWM
V
BR
I
R
V
C
R
DYN
C
t
Note
I
BR
= 1 mA
V
RWM
= 5 V
(Note 1) I
PP
= 1 A
(Note 2)
(Note 3) V
R
= 0 V, f = 1 MHz
Test Condition
Min
6
Typ.
12
0.9
0.3
Max
5
0.5
0.5
Unit
V
V
µA
V
Ω
pF
Note 1: Based on IEC61000-4-5 8/20
µs
pulse.
Note 2: TLP parameter: Z0 = 50
Ω,
tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns,
extraction of dynamic resistance using a least-squares fit of TLP characteristics at I
PP
between 3 A to 8 A.
Note 3: Guaranteed by design.
3
2014-04-14
Rev.5.0
DF10G7M1N
5. Guaranteed ESD Protection (Note)
Test Condition
IEC61000-4-2 (Contact discharge)
ESD Protection
±8
kV
Note:
Criterion: No damage to devices.
6. Marking
Fig. 6.1 Marking
Marking Code
N4
Part Number
DF10G7M1N
7. Land Pattern Dimensions (for reference only)
Fig. 7.1 Land Pattern Dimensions (Unit: mm)
4
2014-04-14
Rev.5.0
DF10G7M1N
8. Characteristics Curves (Note)
Fig. 8.1 I - V
Fig. 8.2 I
R
- V
R
Fig. 8.3 C
t
- V
R
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
5
2014-04-14
Rev.5.0
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