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GBU606

Description
6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size262KB,2 Pages
ManufacturerYFWDIODE
Websitehttp://www.yfwdiode.com/
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GBU606 Overview

6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

GBU606 Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage800 V
Maximum average input current6 A
Processing package descriptionGREEN, PLASTIC, GBU, 4 PIN
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingPURE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Shell connectionisolation
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage800 V
Maximum non-repetitive peak forward current175 A
GBU6005 THRU GBU610
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
REVERSE VOLTAGE:
50 to 1000 VOLTS
FORWARD CURRENT:
6.0 AMPERE
FEATURES
· Glass passivated chip junction
· Reliable low cost construction utilizing molded
plastic technique
· Ideal for printed circuit board
· Low forward voltage drop
· Low reverse leakage current
· High surge current capability
R7,6
3.2X45°
GBU
MECHANICAL DATA
Case: Molded plastic, GBU
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per MIL-STD-202,
method 208 guaranteed
Mounting position: Any
Weight: 0.15ounce, 4.0gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60H
Z
, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
GBU6005 GBU601
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current at
Peak Forward Surge Current,
8.3ms single half-sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage
at 6.0A DC and 25
Maximum Reverse Current
at Rated DC Blocking Voltage
at T
A
=25
T
A
=125
I
R
C
J
R
R
T
J
JA
JC
GBU602
GBU604
GBU606
GBU608
GBU610
Units
Volts
Volts
Volts
Amp
V
RRM
V
RMS
V
DC
50
35
50
100
70
100
200
140
200
400
280
400
6.0
600
420
600
800
560
800
1000
700
1000
T
C
=100
(Note 1),(Note 2)
I
(AV)
I
FSM
175
Amp
V
F
1.0
5.0
500
210
7.4
2.2
-55 to +150
94
Volts
uAmp
pF
/W
/W
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance (Note 1),(Note 2)
Typical Thermal Resistance (Note 1),(Note 2)
Operating and Storage Temperature Range
Tstg
NOTES:
1- Units case mounted on 2.6 x 1.4 x 0.06" thick (6.5 x 3.5 x 0.15 cm) Al. Plate heatsink
2- Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screws
3- Measured at 1 MH
Z
and applied reverse voltage of 4.0 VDC.

GBU606 Related Products

GBU606 GBU6005 GBU608 GBU604 GBU602 GBU601
Description 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER,1-PHASE FULL-WAVE,800V V(RRM),BR-7W 2.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

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