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3DD208

Description
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 200V(Min.)
File Size183KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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3DD208 Overview

Collector-Emitter Breakdown Voltage-: V(BR)CEO= 200V(Min.)

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
3DD208
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 200V(Min.)
·DC
Current Gain-
: h
FE
= 30~250(Min.)@I
C
= 0.5A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= 2.0V(Max)@ I
C
= 1A
APPLICATIONS
·Designed
for switching regulator and power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
VALUE
300
200
6
3
UNIT
V
V
V
A
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
50
150
-55~150
W
T
stg
isc website:www.iscsemi.cn
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