INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
3DD102A
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 100V(Min.)
·DC
Current Gain-
: h
FE
= 20(Min.)@I
C
= 2A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= 0.8V(Max)@ I
C
= 2.5A
APPLICATIONS
·Designed
for power amplifier,DC-DC converter and regulated
power supply applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation@T
C
=75℃
Junction Temperature
Storage Temperature
VALUE
150
100
4
5
50
175
-55~175
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.0
UNIT
℃/W
isc website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
I
CEO
I
CBO
h
FE
f
T
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Current Gain-Bandwidth Product
CONDITIONS
I
C
= 5mA; I
B
= 0
I
C
= 5mA; I
E
= 0
I
E
= 5mA; I
C
= 0
I
C
= 2.5A; I
B
= 0.25A
V
CE
= 50V; I
B
=0
V
CB
= 50V; I
E
=0
I
C
= 2A; V
CE
= 5V
I
C
= 0.5A; V
CE
= 12V
20
1
MIN
100
150
4
3DD102A
MAX
UNIT
V
V
V
0.8
2.0
1.0
V
mA
mA
MHz
isc website：www.iscsemi.cn
2
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