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3DD101B

Description
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 150V(Min.)
File Size186KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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3DD101B Overview

Collector-Emitter Breakdown Voltage-: V(BR)CEO= 150V(Min.)

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
3DD101B
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 150V(Min.)
·DC
Current Gain-
: h
FE
= 20(Min.)@I
C
= 2A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= 0.8V(Max)@ I
C
= 2.5A
APPLICATIONS
·Designed
for power amplifier,DC-DC converter and regulated
power supply applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation@T
C
=75℃
Junction Temperature
Storage Temperature
VALUE
200
150
4
5
50
175
-55~175
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.0
UNIT
℃/W
isc website:www.iscsemi.cn
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