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ES1G-SMA

Description
Major Ratings and Characteristics
File Size90KB,2 Pages
ManufacturerYFWDIODE
Websitehttp://www.yfwdiode.com/
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ES1G-SMA Overview

Major Ratings and Characteristics

(ES1A~ES1J)SMA
Super Fast recovery rectifiers
Major Ratings and Characteristics
I
F(AV)
1.0 A
V
RRM
50 V to 600 V
I
FSM
30 A
t
rr
35 nS
V
F
0.95 V, 1.3 V, 1.7 V
T
j
max.
150 °C
Features
Glass passivated chip junction
Ideal for automated placement
Ultrafast reverse recovery time for high efficiency
Low profile package
High forward surage capability
High temperatrue soldering
260
/10 seconds at terminals
Component in accordance to RoHS 2002/95/1
and WEEE 2002/96/EC
Mechanical Date
Case: JEDEC DO-214AC molded plastic
body over passivated chip
Terminals: Solder plated, solderable per
J-STD-002B and JESD22-B102D
Polarity: Laser band denotes cathode end
Maximum Ratings & Thermal Characteristics & Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Symbol (ES1A) (ES1A) (ES1D) (ES1G) (ES1J) UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forwad voltage at 1.0A
Maximum DC reverse current
at Rated DC blocking voltage
TA = 25
TA = 100
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
JA
50
35
50
100
70
100
200
140
200
1
30
400
280
400
600
420
600
V
V
V
A
A
0.95
5.0
100
35
15
75
–55 to +150
1.30
1.70
V
μA
μA
nS
pF
/W
Maximum reverse recovery time
at I
F
= 0.5 A , I
R
= 1.0 A , I
rr
= 0.25 A
Typical junction capacitance at 4.0 V ,1MHz
Typical thermal resistance
Operating junction and storage temperature range
T
J
, T
STG

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ES1G-SMA ES1A-SMA ES1D-SMA ES1J-SMA
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