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CMS17_13

Description
TOSHIBA Schottky Barrier Diode
File Size167KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet View All

CMS17_13 Overview

TOSHIBA Schottky Barrier Diode

CMS17
TOSHIBA Schottky Barrier Diode
CMS17
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Forward voltage: V
FM
= 0.48 V (max)
Average forward current: I
F (AV)
= 2.0 A
Repetitive peak reverse voltage: V
RRM
= 30 V
Suitable for compact assembly due to a small surface-mount package:
“M−FLAT
TM
” (Toshiba package name)”
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Repetitive peak reverse voltage
Average forward current
Nonrepetitive peak surge current
Junction temperature
Storage temperature range
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
30
2.0 (Note 1)
30 (50 Hz)
−40~150
−40~150
Unit
V
A
A
°C
°C
Note 1: Ta
=
77°C
Device mounted on a ceramic board
Board size: 50 mm
×
50 mm
Soldering size: 2 mm
×
2 mm
Board thickness: 0.64 t
Rectangular waveform (α
=
180°), V
R
=
15 V
JEDEC
JEITA
TOSHIBA
3-4E1A
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Peak forward voltage
Symbol
V
FM (1)
V
FM (2)
I
RRM (1)
I
RRM (2)
C
j
Test Condition
I
FM
=
1.0 A (pulse test)
I
FM
=
2.0 A (pulse test)
V
RRM
=
5 V (pulse test)
V
RRM
=
30 V (pulse test)
V
R
=
10 V, f
=
1.0 MHz
Device mounted on a ceramic board
(board size: 50 mm
×
50 mm)
(soldering land: 2 mm
×
2 mm)
(board thickness: 0.64 t)
Thermal resistance
(junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 6 mm
×
6 mm)
(board thickness: 1.6 t)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 2.1 mm
×
1.4 mm)
(board thickness: 1.6 t)
Thermal resistance
(junction to lead)
R
th (j-ℓ)
Min
Typ.
0.42
0.45
0.8
10
90
Max
0.48
100
60
Unit
V
Peak repetitive reverse current
Junction capacitance
μA
pF
135
°C/W
210
16
°C/W
Start of commercial production
1
2004-09
2013-11-01
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