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SM532164008XSG

Description
DRAM
Categorystorage    storage   
File Size133KB,25 Pages
ManufacturerSMART Modular Technology Inc
Download Datasheet Parametric View All

SM532164008XSG Overview

DRAM

SM532164008XSG Parametric

Parameter NameAttribute value
Objectid110133687
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
SMART
Features
®
SM5321640UUXSUU
May 18, 1998
Modular Technologies
64MByte (16M x 32) DRAM Module - 16Mx4 based
72-pin SODIMM
Part Numbers
SM53216400UXSUU
SM53216401UXSUU
SM53216408UXSUU
SM53216409UXSUU
:
:
:
:
Standard
: JEDEC
Configuration
: Non-parity
Access Time
: 50/60/70ns
Operation Mode
: FPM/EDO
Operating Voltage : 3.3/5.0V
Refresh
: 4K/8K,Normal/Self Refresh
Device Physicals
: 400 mil TSOP
Lead Finish
: Gold/Solder
Length x Height
: 2.350" x 1.100"
No. of sides
: Double-sided
Mating Connector (Examples)
Horizontal
: AMP-177827-1 (3.3V, Gold)
AMP-177827-2 (3.3V, Tin)
AMP-177827-3 (5.0V, Gold)
AMP-177827-4 (5.0V, Tin)
FPM, 5.0V
FPM, 3.3V
EDO, 5.0V
EDO, 3.3V
Note: Refer last page for all "U” options.
Related Products
SM5321680U4XSUU
:
16Mx32,
8Mx8 based.
Functional Diagram
CAS1#
CAS0#
RAS0#
WE#
A0~A11/A12
16Mx8
Block
16Mx8
Block
16Mx8
Block
16Mx8
Block
CAS2#
CAS3#
RAS2#
DQ0~DQ7
DQ8~DQ15
DQ16~DQ23
DQ24~DQ31
DQ0~DQ31
Notes : 1. A12 is NC for 4K refresh module.
2. OE# of all DRAMs is grounded.
3. Each 16Mx8 Block comprises of two 16Mx4 DRAMs.
V
CC
V
SS
Decoupling capacitors
to all devices.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
1

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