CEDM8004_12 datasheet, PDF - EEWORLD Datasheet

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CEDM8004_12: DescriptionSURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET; File Size448KB，2 Pages; ManufacturerCentral Semiconductor

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SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

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CEDM8004

SURFACE MOUNT

P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CEDM8004 is an

enhancement-mode P-Channel MOSFET, manufactured

by the P-Channel DMOS process, designed for high

speed pulsed amplifier and driver applications. This

MOSFET offers low rDS(on) and low threshold voltage.

MARKING CODE: V

SOT-883L CASE

• Devices are

Halogen Free

by design

APPLICATIONS:

• Load/Power switches

• Power supply converter circuits

• Battery powered portable devices

MAXIMUM RATING:

(TA=25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Power Dissipation

Operating and Storage Junction Temperature

FEATURES:

• ESD protection up to 2kV

• Low rDS(on)

• Low threshold voltage

• Logic level compatible

• Small, TLP™ 1x0.6mm, SOT-883L, ultra low profile

0.4mm leadless surface mount package

• Complimentary N-Channel MOSFET CEDM7004

SYMBOL

VDS

VGS

TJ, Tstg

UNITS

°C

8.0

450

100

-65 to +150

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

IGSSF, IGSSR VGS=8.0V, VDS=0

IDSS

BVDSS

VGS(th)

VSD

rDS(ON)

gFS

Crss

Ciss

Coss

Qg(tot)

Qgs

Qgd

VDS=30V, VGS=0

VGS=0, ID=100μA

VDS=VGS, ID=250μA

VGS=0, IS=100mA

VGS=4.5V, ID=430mA

VGS=2.5V, ID=200mA

VGS=1.8V, ID=100mA

VDS =10V, ID=100mA

VDS=25V, VGS=0, f=1.0MHz

VDS=25V,

VDS=10V,

VGS=0, f=1.0MHz

VGS=4.5V, ID=1.0A

VGS=4.5V,

ID=1.0A

200

8.9

8.5

0.88

0.35

0.128

0.5

1.0

1.6

2.6

MAX

3.0

1.0

1.1

2.0

3.3

UNITS

μA

R4 (1-November 2012)

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