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SB352M

Description
35 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size65KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SB352M Overview

35 A, SILICON, BRIDGE RECTIFIER DIODE

SB352M Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Humidity sensitivity level1
Maximum non-repetitive peak forward current400 A
Number of components4
Maximum operating temperature150 °C
Maximum output current35 A
Maximum repetitive peak reverse voltage200 V
surface mountNO
SB 15, 25, 35 SERIES
High Current 15, 25, 35 AMPS. Single Phase Bridge Rectifiers
Voltage Range
50 to 1000 Volts
Current
15.0/25.0/35.0 Amperes
Features
UL Recognized File # E-96005
Glass passivated junction
Metal case with an electrically isolated
epoxy
Rating to 1,000V PRV.
High efficiency
Mounting: thru hole for #8 screw
High temperature soldering guaranteed:
260℃ / 10 seconds at 5 lbs., ( 2.3 kg )
tension
Leads solderable per MIL-STD-202
Method 208
Isolated voltage from case to lead over
2000 volts
1.14(29.0)
1.01(25.7)
SB35
1.14(29.0)
1.01(25.7)
DIA .193(4.9)
HOLE FOR #8 SCREW
.692(17.6)
.612(15.5)
AC
SB35-W
1.14(29.0)
1.01(25.7)
DIA .193(4.9)
HOLE FOR #8 SCREW
.752(19.1)
.672(17.1)
.692(17.6)
.612(15.5)
.602(15.3)
.522(13.3)
1.14(29.0)
1.01(25.7)
.752(19.1)
.672(17.1)
.752(19.1)
.672(17.1)
.490(12.4)
.410(10.4)
.25(6.35)
.040(1.0)
DIA TYP
1.2(30.5)
MIN.
.442(11.23)
.432(10.97)
.442(11.23)
.432(10.97)
.93(23.5)
.81(20.5)
SB35-M
1.14(29.0)
1.01(25.7)
DIA .193(4.9)
HOLE FOR #8 SCREW
.692(17.6)
.612(15.5)
1.14(29.0)
1.01(25.7)
.692(17.6)
.612(15.5)
.692(17.6)
.612(15.5)
.692(17.6)
.612(15.5)
.034(0.86)
.030(0.76)
.25(6.35)
.442(11.23)
.432(10.97)
.93(23.5)
.81(20.5)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@T
C
= 55℃
Peak Forward Surge Current,
Single Sine-wave Superimposed on
Rated Load (JEDEC method )
SB15
SB25
SB35
SB15
SB25
SB35
Symbol
-05
-1
100
70
100
-2
200
140
200
-4
400
280
400
15.0
25.0
35.0
200
300
400
-6
600
420
600
-8
800
560
800
-10
1000
700
1000
Units
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
R
θ
JC
T
J
,T
STG
50
35
50
Maximum Instantaneous Forward
SB15 7.5A
SB25 12.5A
Voltage Drop Per Element
SB35 17.5A
at Specified Current
Maximum DC Reverse Current
at Rated DC Blocking Voltage Per Element
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
1.1
10
2.0
- 50 to + 125 / -50 to +150
V
uA
℃/W
Notes: 1. Thermal Resistance from Junction to Case.
2. Suffix “W” - Wire Lead Structure/”M” - Terminal Location Face to Face.
- 614 -

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