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2114L-3DCQM

Description
Standard SRAM, 1KX4, 300ns, MOS, CDIP18,
Categorystorage    storage   
File Size214KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

2114L-3DCQM Overview

Standard SRAM, 1KX4, 300ns, MOS, CDIP18,

2114L-3DCQM Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1167345750
package instructionDIP, DIP18,.3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time300 ns
I/O typeCOMMON
JESD-30 codeR-XDIP-T18
JESD-609 codee0
memory density4096 bit
Memory IC TypeSTANDARD SRAM
memory width4
Humidity sensitivity level2A
Number of terminals18
word count1024 words
character code1000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1KX4
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeDIP
Encapsulate equivalent codeDIP18,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)250
power supply5 V
Certification statusNot Qualified
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
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