Standard SRAM, 1KX4, 300ns, MOS, PDIP18,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Objectid | 1167345757 |
| package instruction | DIP, DIP18,.3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Maximum access time | 300 ns |
| I/O type | COMMON |
| JESD-30 code | R-PDIP-T18 |
| JESD-609 code | e0 |
| memory density | 4096 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Humidity sensitivity level | 2A |
| Number of terminals | 18 |
| word count | 1024 words |
| character code | 1000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 1KX4 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP18,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | 250 |
| power supply | 5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | MOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 30 |
京公网安备 11010802033920号
EEWORLD
