NCS2632
NOCAP], Pop-Free, 3 V
RMS
Audio Line Driver with
Adjustable Gain
The NCS2632 is a pop−free stereo line driver. It uses
ON Semiconductor’s patented NOCAP technology which allows the
elimination of the external DC−blocking capacitors by providing
ground−referenced outputs through the generation of an internal
negative supply rail. The device can drive 3 V
RMS
into a 600
W
load at
5 V power supply. By eliminating the two external heavy coupling
capacitors, the NOCAP approach offers significant space and cost
savings compared to similar audio solutions.
The NCS2632 has differential inputs and is available with an
external adjustable gain ranging from
±1
V/V to
±10
V/V. The gain is
adjusted with external resistors. The device can also be configured as a
2nd order low pass filter to complement DAC’s and SOC converters.
In addition to the NOCAP architecture, it contains specific circuitry to
prevent “Pop & Click” noise from occurring during Enable /
Shutdown transitions. The Signal-to-Noise Ratio reaches 105 dB,
offering high fidelity audio sound. The NCS2632 exhibits a high
power supply rejection with a typical value of 90 dB. This device also
features an Under−Voltage Protection (UVP) function which can be
adjusted using an external resistor bridge. The device is available in a
TSSOP−14 package.
Features
♦
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MARKING
DIAGRAM
14
1
TSSOP−14
CASE 948G
A
L
Y
W
G
1
14
NCS
2632
ALYWG
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(*Note: Microdot may be in either location)
*For additional marking information, refer to
Application Note AND8473/D.
•
NOCAP
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
•
•
•
•
•
•
•
•
•
Eliminates Pop/Clicks
♦
Eliminates Output DC−Blocking Capacitors –
Provides Flat Frequency Response 20 Hz – 20 kHz
Supply Voltage from 2.2 V to 5.5 V
Low Noise and THD
♦
SNR = 105 dB
♦
Typical V
n
at 8
mVrms,
A−Weighted
♦
THD+N < 0.001% at 1 kHz
Output Voltage into 600
W
Load
♦
2 V
RMS
with 3.3 V Supply Voltage
♦
3 V
RMS
with 5 V Supply Voltage
Adjustable Gain from
±
1 V/V to
±
10 V/V
Differential Input
High PSRR: 90 dB
External Under−Voltage Detection Function
Enhanced Pop & Click Suppression Function
Offset Voltage
≤ ±400
mV
•
Outputs pass
±8
kV contact discharge according to
IEC61000−4−2 under application conditions
•
Available in a TSSOP−14 package
•
These Devices are Pb−Free, Halogen Free/BFR Free
and are RoHS Compliant
Applications
•
•
•
•
•
Set−Top Boxes
PDP / LCD TV
Blu−ray™ Player, DVD Players
Home Theater in a Box
Laptops, Notebook PCs
©
Semiconductor Components Industries, LLC, 2013
October, 2013
−
Rev. 4
1
Publication Order Number:
NCS2632/D
NCS2632
VDD
INLP
INLM
OUTL
EN
CP
CN
Charge
Pump
Circuitry
Bias
Circuitry
AGND
Click/Pop
Suppression
Circuitry
AGND
UVP
PGND
AGND
OUTR
VSS
INRP
INRM
Figure 1. NCS2632, Simplified Block Diagram
1
2
3
4
5
6
7
INRP
INRM
OUTR
AGND
EN
VSS
CN
INLP
INLM
OUTL
UVP
PGND
VDD
CP
14
13
12
11
10
9
8
Figure 2. NCS2632, Pinout
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2
NCS2632
PIN FUNCTION AND DESCRIPTION
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Name
INRP
INRM
OUTR
AGND
EN
VSS
CN
CP
VDD
PGND
UVP
OUTL
INLM
INLP
Type
Input
Input
Output
Ground
Input
Power
−
−
Power
Ground
Input
Output
Input
Input
Right channel positive input
Right channel negative input
Right channel output
Analog ground. Connect to PGND
Enable pin. Active High
Negative rail output. Connected to ground through 1
mF
low ESR ceramic reservoir capacitor.
Flying capacitor Negative terminal. Connected to CP through 1
mF
low ESR ceramic capacitor.
Flying capacitor Positive terminal. Connected to CN through 1
mF
low ESR ceramic capacitor.
Power Supply Input
Power ground
Under−voltage detection pin.
Left Channel Output
Left channel negative input
Left channel positive input
Description
ABSOLUTE MAXIMUM RATINGS
(Note 1)
Parameter
Supply Voltage, VDD to GND
Input Voltage
Minimum Load Impedance
Logic Pin Voltage (EN)
Maximum Junction Temperature
Storage Temperature Range
ESD Capability (Note 2)
Latch−up Current (Note 3)
Moisture Sensitivity Level (Note 4)
Human Body Model
Machine Model
T
J(max)
T
STG
ESD
HBM
ESD
MM
I
LU
MSL
Symbol
V
DD
V
I
R
L
Value
−0.3
to 5.5
V
SS
– 0.3 to V
DD
+ 0.3
>600
–0.3 to V
DD
+0.3
−40
to 150
−40
to 150
2000
200
100
Level 1
Unit
V
V
W
V
°C
°C
V
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (JEDEC standard: JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (JEDEC standard: JESD22−A115)
3. Latch−up Current tested per JEDEC standard: JESD78
4. Moisture Sensitivity Level tested per IPC/JEDEC standard: J−STD−020A
THERMAL CHARACTERISTICS
Parameter
Junction−to−Ambient Thermal Resistance, TSSOP−14 (Note 5)
Symbol
q
JA
Value
115
Unit
°C/W
5. Values based on copper area of 645 mm
2
(or 1 in
2
) of 1 oz copper thickness and FR4 PCB substrate.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage with UVP connected to Ground
High−Level Input Voltage
Low−Level Input Voltage
Ambient Temperature
Symbol
V
DD
V
IH
(EN)
V
IL
(EN)
T
A
−40
Min
2.2
1.2
0.4
85
Typ
3.3
Max
5.5
Unit
V
V
V
°C
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3
NCS2632
ELECTRICAL CHARACTERISTICS
, T
A
= 25°C (unless otherwise noted)
Parameter
Output Offset Voltage
High−Level Input Current (EN)
Low−Level Input Current (EN)
Supply Current
Symbol
|V
OS
|
|I
IH
|
|I
IL
|
I
DD
Test Conditions
V
DD
= 2.5 V to 5 V, Voltage follower
−
gain = 1
V
DD
= 5 V, V
I
= V
DD
V
DD
= 5 V, V
I
= 0 V
V
DD
= 2.2 V, No load, EN = V
DD
V
DD
= 5.5 V, No load, EN = V
DD
Shutdown mode, V
DD
= 2.2 V to 5.5 V
Under−Voltage Protection (UVP)
Threshold
UVP Internal Hysteresis Current Source
Charge Pump Frequency
V
UVP
I
HYS
f
cp
7
8
60
1.25
5
400
Min
Typ
100
Max
400
100
100
11
11
500
Unit
mV
nA
nA
mA
mA
nA
V
mA
kHz
OPERATING CHARACTERISTICS
V
DD
= 3.3 V, T
A
= 25°C, R
L
= 2.5 kW, C
VSS
= 1
mF,
C
IN
= 10
mF,
R
IN
= 10 kW, R
fb
= 20 kW (unless otherwise noted)
Parameter
Symbol
V
O
Output Voltage (Outputs In Phase)
Test Conditions
THD = 1%, V
DD
= 3.3 V, f = 1 kHz
THD = 1%, V
DD
= 5 V, f = 1 kHz
THD = 1%, V
DD
= 5 V, f = 1 kHz, R
L
= 100 kW
Total Harmonic Distortion plus Noise
THD+N
V
O
= 2 Vrms, f = 1 kHz
V
O
= 2 Vrms, f = 10 kHz
Power Supply Rejection
Crosstalk
Output Current Limit
Input Resistor Range (Note 6)
Feedback Resistor Range (Note 6)
Maximum Capacitive Load (Note 6)
Noise Output Voltage
Signal to Noise Ratio
6. Guaranteed by design.
PSRR
XTALK
I
O
R
IN
R
fb
C
OUT
V
N
SNR
A−weighted
V
O
= 2 Vrms, THD + N = 0.1% A−weighted
filter
V
DD
= 2.5 V to 5 V
V
O
= 2 Vrms, f = 1 kHz
V
DD
= 3.3 V
1
4.7
Min
2.05
3.05
3.1
0.001
0.001
90
−120
21
10
20
220
8
105
47
100
%
%
dB
dB
mA
kW
kW
pF
mVrms
dB
Typ
Max
Unit
Vrms
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4
NCS2632
TYPICAL CHARACTERISTICS
V
DD
= 3.3 V, T
A
= 25°C, R
L
= 2.5 kW, C
VSS
= 1
mF,
C
IN
= 10
mF,
R
IN
= 10 kW, R
fb
= 20 kW (unless otherwise noted)
10
1
THD+N (%)
0.1
0.01
−40°C
25°C
85°C
125°C
THD+N (%)
10
1
0.1
0.01
−40°C
25°C
85°C
125°C
0.001
0.0001
0.001
0.0001
0.01
0.1
V
OUT
(V)
1
10
0.01
0.1
V
OUT
(V)
1
10
Figure 3. THD+N vs. Output Voltage over
Temperature, R
L
= 2.5 kW, V
DD
= 3.3 V, f = 1 kHz
10
1
THD+N (%)
0.1
0.01
V
DD
= 2.0 V
V
DD
= 3.0 V
V
DD
= 3.3 V
V
DD
= 4.0 V
V
DD
= 4.2 V
V
DD
= 5.0 V
V
DD
= 5.5 V
10
1
THD+N (%)
Figure 4. THD+N vs. Output Voltage over
Temperature, R
L
= 2.5 kW, V
DD
= 5 V, f = 1 kHz
V
DD
= 2.2 V
V
DD
= 3.0 V
V
DD
= 3.3 V
V
DD
= 3.6 V
V
DD
= 4.2 V
V
DD
= 5.0 V
V
DD
= 5.5 V
0.1
0.01
0.001
0.0001
0.001
0.0001
0.01
0.1
V
OUT
(V)
1
10
0.01
0.1
V
OUT
(V)
1
10
Figure 5. THD+N vs. Output Voltage over
Supply, R
L
= 2.5 kW, f = 1 kHz
0.1
V
DD
= 5 V, V
OUT
= 3 V
V
DD
= 3.3 V, V
OUT
= 2 V
V
DD
= 2.2 V, V
OUT
= 1.4 V
THD+N (%)
0.1
Figure 6. THD+N vs. Output Voltage over
Supply, R
L
= 600
W,
f = 1 kHz
V
DD
= 3.3 V, V
OUT
= 2.2 V
V
DD
= 5 V, V
OUT
= 3.3 V
0.01
THD+N (%)
0.01
0.001
0.001
0.0001
20
200
2000
20,000
0.0001
20
200
2000
20,000
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 7. THD+N vs. Frequency, R
L
= 2.5 kW
Figure 8. THD+N vs. Frequency, R
L
= 600
W
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