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SB330

Description
3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size13KB,1 Pages
ManufacturerSSE
Websitehttp://www.sse-diode.com/
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SB330 Overview

3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD

SB330 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-2
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage30 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current80 A
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
SB320 THRU SB360
SCHOTTKY BARRIER
RECTIFIER
VOLTAGE: 20 TO 60V CURRENT: 3.0A
FEATURES
• Epitaxial construction for chip
• High current capability
• Low forward voltage drop
• Low power loss, high efficiency
• High surge capability
• High temperature soldering guaranteed:
250
o
C/10sec/0.375"(9.5mm) lead length
at 5 lbs tension
TECHNICAL
SPECIFICATION
DO - 201AD
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
• Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive
load, derate current by 20%)
RATINGS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(9.5mm lead length at T
L
=95
o
C)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Forward Voltage (at 3.0A DC)
Maximum DC Reverse Current
T
a
=25
o
C
at rated DC blocking voltage
T
a
=100
o
C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
SB
320
20
14
20
SB
330
30
21
30
SB
340
40
28
40
3.0
80
SB
350
50
35
50
SB
360
60
42
60
UNITS
V
V
V
A
A
0.55
3.0
30
0.75
V
mA
mA
220
C
J
Typical Junction Capacitance
(Note 1)
pF
o
30
R
θ
(ja)
Typical Thermal Resistance
(Note 2)
C/W
o
-65 to +125
-65 to +150
T
J
Operating Temperature
C
o
-65 to +150
T
STG
Storage Temperature
C
Note:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0V
dc
2.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, vertical P.C. board mounted
http://www.sse-diode.com

SB330 Related Products

SB330 SB360 SB350 SB340 SB320
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