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SB320

Description
3 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size61KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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SB320 Overview

3 A, SILICON, BRIDGE RECTIFIER DIODE

SB320 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Humidity sensitivity level1
Maximum non-repetitive peak forward current60 A
Number of components4
Maximum operating temperature125 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage200 V
surface mountNO
SB305
THRU
SB3100
Single Phase 3.0 AMPS. Silicon Bridge Rectifiers
Voltage Range
50 to 1000 Volts
Current
3.0 Amperes
Features
UL Recognized File # E-96005
High surge current capability
Low forward voltage drop
High temperature soldering guaranteed:
260℃ / 10 seconds / 0.375” ( 9.5mm )
lead length at 5 lbs., ( 2.3 kg ) tension
Small size, simple installation
Leads solderable per MIL-STD-202,
Method 208
SB-3
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
A
= 50℃
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.5A
Maximum DC Reverse Current @ T
A
=25℃
at Rated DC Blocking Voltage @ T
A
=100℃
Typical Thermal Resistance (Note)
Operating Temperature Range
Storage Temperature Range
Symbol
SB
305
SB
310
SB
320
SB
340
SB
360
SB
380
SB
3100
Units
V
V
V
A
A
V
uA
uA
℃/W
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
R
θ
JC
T
J
50
35
50
100
70
100
200
140
200
400
280
400
3.0
60
1.1
600
420
600
800 1000
560 700
800 1000
T
STG
Note: Thermal Resistance from Junction to Case per Leg.
10
500
10
-55 to +125
-55 to +150
- 670 -

SB320 Related Products

SB320 SB380 SB360 SB340 SB3100 SB310 SB305
Description 3 A, SILICON, BRIDGE RECTIFIER DIODE 3 A, 80 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, BRIDGE RECTIFIER DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, BRIDGE RECTIFIER DIODE 3 A, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS SINGLE BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 0.79 V 1 V 1 V
Humidity sensitivity level 1 1 1 1 1 1 1
Maximum non-repetitive peak forward current 60 A 60 A 60 A 60 A 150 A 60 A 60 A
Number of components 4 4 4 4 1 4 4
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 150 °C 125 °C 125 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Maximum repetitive peak reverse voltage 200 V 800 V 600 V 400 V 100 V 100 V 50 V
surface mount NO NO NO NO NO NO NO
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor - Taiwan Semiconductor
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