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SB30W03V

Description
3 A, 30 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size64KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

SB30W03V Overview

3 A, 30 V, SILICON, RECTIFIER DIODE

SB30W03V Parametric

Parameter NameAttribute value
package instructionR-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JESD-30 codeR-PSIP-T3
Maximum non-repetitive peak forward current20 A
Number of components2
Phase1
Number of terminals3
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse current200 µA
Maximum reverse recovery time0.03 µs
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
Ordering number:EN4174
SB30W03V
Schottky Barrier Diode (Twin Type · Cathod Common)
30V, 3A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1238A
[SB30W03V]
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=30ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
1:Anode
2:Cathode
3:Anode
SANYO:NMP
Specifications
Absolute Maximum Ratings
at Ta = 25˚C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1 cycle
Conditions
Ratings
30
35
3
20
–55 to +125
–55 to +125
Unit
V
V
A
A
˚C
˚C
Electrical Characteristics
at Ta = 25˚C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rth(j-a)
IR=1mA
IF=3A
VR=15V
VR=10V, f=1MHz
IF=IR=300mA, See specified Test Circuit.
110
160
30
Conditons
Ratings
min
30
0.55
200
typ
max
Unit
V
V
µA
pF
ns
˚C/W
trr Test Circuit
Electrical Connection
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41098HA (KT)/41894YH (KOTO) 8-7184 No.4174-1/2
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