UNISONIC TECHNOLOGIES CO., LTD
02N06Z
Preliminary
Power MOSFET
0.2A, 60V SILICON N-CHANNEL
MOSFET
DESCRIPTION
The UTC
02N06Z
is a silicon N-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance, high switching speed and low gate charge.
FEATURES
* R
DS(ON)
<2.4Ω @ V
GS
=10V, I
D
=200mA
R
DS(ON)
<4.0Ω @ V
GS
=4V, I
D
=200mA
* High switching speed
* Low gate charge
* High ESD
SYMBOL
3. Drain
2. Gate
1. Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
02N06ZL-AL3-R
02N06ZG-AL3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
SOT-323
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
MARKING
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Copyright © 2013 Unisonic Technologies Co., Ltd
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02N06Z
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C)
SYMBOL
RATINGS
UNIT
V
DSS
60
V
V
GSS
±20
V
200
mA
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
800
mA
Continuous
I
S
200
mA
Source Current
Pulsed (Note 2)
I
SP
800
mA
Power Dissipation (Note 3)
P
D
200
mW
Channel Temperature
T
CH
150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pw≤10µs, Duty cycle≤1%.
3. Each terminal mounted on a recommended.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
|Y
FS
|
C
ISS
C
OSS
C
RSS
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
t
D(OFF)
t
F
TEST CONDITIONS
I
D
=10µA, V
GS
=0V
V
DS
=60V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
DS
=10V, I
D
=1mA
V
GS
=10V, I
D
=200mA
V
GS
=4V, I
D
=200mA
V
DS
=10V, I
D
=200mA
1
1.7
2.8
100
15
8
4
2.2
0.6
0.3
6
5
12
95
4.4
MIN TYP MAX UNIT
60
1
+10
-10
2.5
2.4
4.0
V
µA
µA
µA
V
Ω
Ω
mS
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
(Note 2)
Forward Transfer Admittance (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 3)
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
Notes: 1. Pw≤300µs, Duty cycle≤1%.
2. Pulsed
V
GS
=0V, V
DS
=10V, f=1.0MHz
V
GS
=10V, V
DD
=30V, I
D
=200mA
V
DD
=30V, V
GS
=10V, I
D
=100mA,
R
GS
=10Ω, R
L
=300Ω
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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VER.a
02N06Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
DS
R
G
R
D
90%
V
GS
10V
V
DS
10%
DUT
V
GS
t
d(ON)
t
ON
t
R
t
d(OFF)
t
F
t
OFF
Resistive Switching Test Circuit
Resistive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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02N06Z
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-906.a
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