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SB30-09

Description
3 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size74KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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SB30-09 Overview

3 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB

Ordering number:EN2586B
SB30-09
Schottky Barrier Diode (Twin Type · Cathode Common)
90V, 3A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1159A
[SB30-09]
Features
· Low forward voltage (VF max=0.85V).
· Fast reverse recovery time (trr max=30ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
A:Anode
C:Cathode
JEDEC:TO-220AB
EIAJ:SC-46
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
Ratings
90
95
Unit
V
V
A
A
50Hz, resistive load, Tc=105˚C
50Hz sine wave, 1 cycle
3
40
–55 to +125
–55 to +125
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
trr
Rthj-c
Conditons
IR=0.5mA, Tj=25˚C, *
IF=1.2A, Tj=25˚C, *
VR=45V, Tj=25˚C, *
IF=2A, Tj=25˚C, *,–dIF/dt=10A/µs
Junction-Case:Smoothed DC
Ratings
min
90
0.85
0.2
30
5.0
typ
max
Unit
V
V
mA
ns
˚C/W
Note:* Value per element
Electrical Connection
A:Anode
C:Cathode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41098HA (KT)/1218AT, TS No.2586-1/3

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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