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SB25W05T

Description
2.5 A, 50 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size77KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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SB25W05T Overview

2.5 A, 50 V, SILICON, RECTIFIER DIODE

SB25W05T Parametric

Parameter NameAttribute value
MakerSANYO
Objectid1823086003
package instructionR-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
compound_id5713091
Other featuresHIGH RELIABILITY
applicationHIGH VOLTAGE FAST RECOVERY
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PSIP-T3
Maximum non-repetitive peak forward current25 A
Number of components2
Phase1
Number of terminals3
Maximum output current2.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.02 µs
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Ordering number:EN4860
SB25W05T
Schottky Barrier Diode (Twin Type · Cathode Common)
50V, 2.5A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1254A
[SB25W05T]
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=20ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
trr Test Circuit
SANYO:TP
1:Anode
2:Cathode
3:Anode
4:Cathode
unit:mm
1257A
[SB25W05T]
Electrical Connection
1:Anode
2:Cathode
3:Anode
4:Cathode
SANYO:TP-FA
Specifications
Absolute Maximum Ratings
at Ta = 25˚C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IO
IFSM
Tj
Tstg
50Hz resistive load, Tc=117˚C
50Hz resistive load, Tc=106˚C, Total rating
50Hz sine wave, 1 cycle
Conditions
Ratings
50
55
2.5
5
25
–55 to +125
–55 to +125
Unit
V
V
A
A
A
˚C
˚C
Electrical Characteristics
at Ta = 25˚C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance (Junction-Ambient)
Thermal Resistance (Junction-Case)
Symbol
VR
VF
IR
C
trr
Rth(j-a)
Rth(j-c)
IR=1mA
IF=2.5A
VR=25V
VR=10V, f=1MHz
IF=IR=300mA, See specified Test Circuit.
90
5
120
20
Conditons
Ratings
min
50
0.55
200
typ
max
Unit
V
V
µA
pF
ns
˚C/W
˚C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41098HA (KT)/70194MO (KOTO) BX-1836 No.4860-1/3

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