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SB250-09R

Description
25 A, 90 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size73KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

SB250-09R Overview

25 A, 90 V, SILICON, RECTIFIER DIODE

SB250-09R Parametric

Parameter NameAttribute value
Parts packaging codeTO-3PML
package instructionR-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationPOWER
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current160 A
Number of components2
Phase1
Number of terminals3
Maximum output current25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage90 V
Maximum reverse current1000 µA
Maximum reverse recovery time0.06 µs
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
Ordering number :EN2499
SB250-09R
Schottky Barrier Diode (Twin Type · Cathode Common)
90V, 25A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1180
[SB250-09R]
Features
· Low forward voltage (VF max=0.85V).
· Fast reverse recovery time (trr max=60ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
· Micaless package facilitating easy mounting.
A:Anode
C:Cathode
A:Anode
SANYO:TO-3PML
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
Ratings
–90
–95
Unit
V
V
A
A
50Hz, resistive load, Tc=67˚C
50Hz sine wave, 1 cycle
25
160
–55 to +125
–55 to +125
˚C
˚C
Electrical Characteristics
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
trr
Rthj-c
Conditions
Ratings
min
–90
0.85
–1.0
60
1.8
typ
max
Unit
V
V
mA
ns
IR=–5mA, Tj=25˚C*
IF=10A, Tj=25˚C*
VR=–45V, Tj=25˚C*
IF=2A, Tj=25˚C*, –dIF/dt=10A/µs
Junction-Case:Smoothed DC
˚C/W
Note)*:Value per element
Electrical Connection
A:Anode
C:Cathode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/D227AT, TS No.2499-1/3

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