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SB20W05Z

Description
2 A, 50 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size64KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

SB20W05Z Overview

2 A, 50 V, SILICON, RECTIFIER DIODE

SB20W05Z Parametric

Parameter NameAttribute value
MakerSANYO
package instructionR-PSIP-T3
Contacts3
Manufacturer packaging codeFLP-3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationHIGH VOLTAGE FAST RECOVERY
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JESD-30 codeR-PSIP-T3
Maximum non-repetitive peak forward current20 A
Number of components2
Phase1
Number of terminals3
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse current200 µA
Maximum reverse recovery time0.02 µs
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Ordering number:EN3864
SB20W05Z
Schottky Barrier Diode (Twin Type · Cathode Common)
50V, 2A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1243A
[SB20W05Z]
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=20ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
1:Anode
2:Cathode
3:Anode
SANYO:FLP
Specifications
Absolute Maximum Ratings
at Ta = 25˚C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1 cycle
Conditions
Ratings
50
55
2
20
–55 to +125
–55 to +125
Unit
V
V
A
A
˚C
˚C
Electrical Characteristics
at Ta = 25˚C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interteminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rth(j-a)
IR=1mA
IF=2A
VR=25V
VR=10V, f=1MHz
IF=IR=300mA, See specifaied Test Circuit.
70
120
20
Conditons
Ratings
min
50
0.55
200
typ
max
Unit
V
V
µA
pF
ns
˚C/W
trr Test Circuit
Electrical Connection
1:Anode
2:Cathode
3:Anode
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41098HA (KT)/42294YH (KOTO) 8-7463 No.3864-1/2

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