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RS1K

Description
1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size87KB,2 Pages
ManufacturerYFWDIODE
Websitehttp://www.yfwdiode.com/
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RS1K Overview

1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC

RS1K Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionLEAD FREE, PLASTIC, SMA, 2 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Diode component materialsSILICON
Diode typeSIGNAL DIODE
Maximum reverse recovery time0.5000 us
Maximum repetitive peak reverse voltage800 V
Maximum average forward current1 A
(RS1A~RS1M) SMA
Fast Recovery rectifiers
Major Ratings and Characteristics
I
F(AV)
1.0 A
V
RRM
50 V to 1000 V
I
FSM
30 A
t
rr
150nS, 250nS, 500nS
V
F
1.3 V
T
j
max.
150 °C
Features
Low profile package
Ideal for automated placement
Glass passivated chip junction
Fast switching for high efficiency
High forward surage capability
High temperatrue soldering
260
/10 seconds at terminals
Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
Mechanical Date
Case: JEDEC DO-214AC molded plastic
over glass passivated chip
Terminals: Solder plated, solderable per
J-STD-002B and JESD22-B102D
Polarity: Laser band denotes cathode end
Maximum Ratings & Thermal Characteristics & Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Symbol (RS1A) (RS1B) (RS1D) (RS1G) (RS1J) (RS1K) (RS1M) UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forwad voltage at 1.0A
Maximum DC reverse current
at Rated DC blocking voltage
T
A
= 25
T
A
= 125
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
JA
50
35
50
100
70
100
200
140
200
400
280
400
1
30
1.3
5.0
50
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
μA
μA
Maximum reverse recovery time
at I
F
= 0.5 A , I
R
= 1.0 A , I
rr
= 0.25 A
Typical junction capacitance at 4.0 V ,1MHz
Thermal resistance from junction to ambient
Operating junction and storage
temperature range
150
11
75
250
500
8
nS
pF
/W
T
J
,T
STG
–55 to +150

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Index Files: 2530  164  1547  1012  1340  51  4  32  21  27 
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