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SB20-05T

Description
2 A, 50 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size70KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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SB20-05T Overview

2 A, 50 V, SILICON, RECTIFIER DIODE

SB20-05T Parametric

Parameter NameAttribute value
package instructionR-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW LEAKAGE CURRENT
applicationHIGH VOLTAGE FAST RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JESD-30 codeR-PSIP-T3
Maximum non-repetitive peak forward current20 A
Number of components1
Phase1
Number of terminals3
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse current200 µA
Maximum reverse recovery time0.02 µs
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
Ordering number:EN4441
SB20-05T
Schottky Barrier Diode
50V, 2A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1255A
[SB20-05T]
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=20ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
1:No Contact
2:Cathode
3:Anode
4:Cathode
SANYO:TP
trr Test Circuit
unit:mm
1256A
[SB20-05T]
1:No Contact
2:Cathode
3:Anode
4:Cathode
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
SANYO:TP-FA
Ratings
50
55
Unit
V
V
A
A
50Hz, resistive load, Tc=115˚C
50Hz sine wave, 1 cycle
2
20
–55 to +125
–55 to +125
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance (Junction-Ambient)
Thermal Resistance (Junction-Case)
Symbol
VR
VF
IR
C
trr
Rth(j-a)
Rthj(j-c)
IR=1mA
IF=2A
VR=25V
VR=10V, f=1MHz
IF=IR=300mA, See sepcified Test Circuit
90
6
120
20
Conditons
Ratings
min
50
0.55
200
typ
max
Unit
V
V
µA
pF
ns
˚C/W
˚C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/42094YH (KOTO) AX-8336 No.4441-1/3
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