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SB170

Description
1 A, 70 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size72KB,2 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
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SB170 Overview

1 A, 70 V, SILICON, SIGNAL DIODE

SB120 THRU SB1B0
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage -
20 to 100 Volts
Forward Current -
1.0 Ampere
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Flame retardant epoxy molding compound
1.0 ampere operation at T
L
=90 with no thermal runaway
For use in low voltage, high frequency inverters
free wheeling, and polarity protection applications
Mechanical Data
Case:
Molded plastic, DO-41
Terminals:
Axial leads, solderable per
MIL-STD-202, method 208
Polarity:
Color band denotes cathode
Mounting Position:
Any
Weight:
0.012 ounce, 0.33 gram
DIM
A
B
C
D
inches
Min.
0.165
0.079
0.028
1.000
DIM ENSIONS
mm
Max.
0.205
0.106
0.034
-
Min.
4.2
2.0
0.71
25.40
Max.
5.2
2.7
0.86
-
Note
Maximum Ratings and Electrical Characteristics
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
Symbols
SB120
SB130
SB140
SB150
SB160
SB170
SB180
SB190 SB1B0
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
L
=90
Peak forward surge current, I
FM
(surge):
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method)
Maximum forward voltage at 1.0A
Maximum full load reverse current, full cycle
average at T
A
=75
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25
T
A
=100
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R(AV)
I
R
C
J
R
JA
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
1.0
30.0
70
49
70
80
56
80
90
63
90
100
70
100
Volts
Volts
Volts
Amp
Amps
0.55
0.70
30.0
1.0
10.0
110.0
80.0
-50 to +125
0.85
Volts
mA
mA
F
/W
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
Operating and storage temperature range
T
J
, T
STG
Notes:
(1) Measured at 1.0MHz and applied reverse voltage of 4.0 VDC
(2) Thermal resistance junction to ambient
1

SB170 Related Products

SB170 SB190 SB180 SB160 SB150 SB140 SB130 SB120
Description 1 A, 70 V, SILICON, SIGNAL DIODE 1 A, 90 V, SILICON, SIGNAL DIODE, DO-41 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 60 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 40 V, SILICON, SIGNAL DIODE, DO-41 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41
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