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RS3B

Description
3 A, 100 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size91KB,2 Pages
ManufacturerYFWDIODE
Websitehttp://www.yfwdiode.com/
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RS3B Overview

3 A, 100 V, SILICON, RECTIFIER DIODE

RS3A~RS3M SMB
Fast Recovery rectifiers
Major Ratings and Characteristics
I
F(AV)
3.0 A
50 to 1000V
V
RRM
100 A
I
FSM
t
rr
150nS,250S,500S
V
F
1.3 V
T
j
max.
150 °C
Features
Low profile package
Ideal for automated placement
Glass passivated chip junction
Fast switching for high efficiency
High forward surge capability
High temperature soldering
260 /10 seconds at terminals
Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
Mechanical Date
Case: JEDEC DO-214AB molded plastic
over glass passivated chip
Terminals: Solder plated, solderable per
J-STD-002B and JESD22-B102D
Polarity: Laser band denotes cathode end
Maximum Ratings & Thermal Characteristics & Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
Symbol
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
at Rated DC blocking voltage
T
A
= 25
T
A
= 125
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
JL
RS3A RS3B RS3D RS3G RS3J
50
35
50
100
70
100
200
140
200
400
280
400
3
100
1.3
5.0
50
150
30
35
–55 to +150
250
600
420
600
RS3K RS3M UNIT
800
560
800
1000
700
1000
V
V
V
A
A
V
A
500
nS
pF
/W
Maximum reverse recovery time
at I
F
= 0.5 A , I
R
= 1.0 A , I
rr
= 0.25 A
Typical junction capacitance at 4.0 V ,1MHz
Thermal resistance from junction to Lead
Operating junction and storage temperature range
T
J
,T
STG

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RS3B RS3A-SMB RS3K RS3M RS3D
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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