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SB160-05H

Description
16 A, 50 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size71KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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SB160-05H Overview

16 A, 50 V, SILICON, RECTIFIER DIODE

SB160-05H Parametric

Parameter NameAttribute value
MakerSANYO
Parts packaging codeTO-3PB
package instructionR-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationPOWER
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current140 A
Number of components2
Phase1
Number of terminals3
Maximum output current16 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse current800 µA
Maximum reverse recovery time0.075 µs
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
Ordering number :EN1982A
SB160-05H
Schottky Barrier Diode (Twin Type · Cathode Common)
50V, 16A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1160
[SB160-05H]
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=75ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
C:Cathode
A:Anode
SANYO:TO-3PB
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
Ratings
–50
–55
Unit
V
V
A
A
50Hz, resistive load, Tc=108˚C
50Hz sine wave, 1 cycle
16
140
–55 to +125
–55 to +125
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
trr
Rthj-c
Conditions
Ratings
min
–50
0.55
–0.8
75
1.3
typ
max
Unit
V
V
mA
ns
IR=–4mA, Tj=25˚C*
IF=8A, Tj=25˚C*
VR=–25V, Tj=25˚C*
IF=2A, Tj=25˚C*, –dIF/dt=10A/µs
Junction-Case:Smoothed DC
˚C/W
Note)*:Value per element
Electrical Connection
A:Anode
C:Cathode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/4198TA, TS No.1982-1/3

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Index Files: 2478  1808  37  1882  7  50  37  1  38  16 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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